Influence of plasma volume discharge in atmospheric- pressure air on the admittance of MIS structures based on MBE p-HgCdTe

A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, D. V. Grigoriev, V. F. Tarasenko, M. A. Shulepov

Research output: Contribution to journalArticle

Abstract

This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structures based on HgCdTe (MCT) epitaxial films. The MIS structure based on films exposed to the discharge significantly changed its main parameters. The most notable feature of the structure exposed to discharge is the significant increase in the positive fixed charge in the insulator. A possible reason for changes in the characteristics of MIS structure after exposure to discharge is the significant change in the impurity-defect system of the semiconductor near the interface. This is accompanied with a formation of an insulator film of nanometer thickness on the surface, which gives rise to positive fixed charge.

Original languageEnglish
Article number012003
JournalJournal of Physics: Conference Series
Volume652
Issue number1
DOIs
Publication statusPublished - 5 Nov 2015
Externally publishedYes

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MIS (semiconductors)
electrical impedance
atmospheric pressure
air
insulators
electrical properties
impurities
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Influence of plasma volume discharge in atmospheric- pressure air on the admittance of MIS structures based on MBE p-HgCdTe. / Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Grigoriev, D. V.; Tarasenko, V. F.; Shulepov, M. A.

In: Journal of Physics: Conference Series, Vol. 652, No. 1, 012003, 05.11.2015.

Research output: Contribution to journalArticle

Voitsekhovskii, A. V. ; Nesmelov, S. N. ; Dzyadukh, S. M. ; Grigoriev, D. V. ; Tarasenko, V. F. ; Shulepov, M. A. / Influence of plasma volume discharge in atmospheric- pressure air on the admittance of MIS structures based on MBE p-HgCdTe. In: Journal of Physics: Conference Series. 2015 ; Vol. 652, No. 1.
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