Influence of input energy on nanosized product of Ti-Si-N system obtained by plasmodynamic method

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Composite ceramics TiN/Ti5Si3 is of a great interest due to its high hardness, fracture toughness, electrical conductivity and uniquely high resistance to erosion and oxidation up to 800 Celcius degree. The main problem is connected with the synthesis of necessary raw materials for ceramics sintering. Earlier it was shown the possibility to implement one stage synthesis of main components using plasmodynamic method. This paper shows the experimental results about the influence of input energy value on the products of the plasmodynamic synthesis, which were characterized using X-ray diffractometry and transmission electron microscopy methods.

Original languageEnglish
Title of host publicationProceedings - 2016 11th International Forum on Strategic Technology, IFOST 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages165-169
Number of pages5
ISBN (Electronic)9781509008551
DOIs
Publication statusPublished - 21 Mar 2017
Event11th International Forum on Strategic Technology, IFOST 2016 - Novosibirsk, Russian Federation
Duration: 1 Jun 20163 Jun 2016

Conference

Conference11th International Forum on Strategic Technology, IFOST 2016
CountryRussian Federation
CityNovosibirsk
Period1.6.163.6.16

Keywords

  • discharge plasma
  • plasmodynamic synthesis
  • titanium nitride
  • titanium silicide

ASJC Scopus subject areas

  • Ceramics and Composites
  • Computational Mathematics
  • Computer Science Applications
  • Mechanical Engineering
  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials
  • Control and Optimization

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  • Cite this

    Sivkov, A., Gerasimov, D., Saigash, A., & Shanenkov, I. (2017). Influence of input energy on nanosized product of Ti-Si-N system obtained by plasmodynamic method. In Proceedings - 2016 11th International Forum on Strategic Technology, IFOST 2016 (pp. 165-169). [7884074] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IFOST.2016.7884074