Abstract
Composite ceramics TiN/Ti5Si3 is of a great interest due to its high hardness, fracture toughness, electrical conductivity and uniquely high resistance to erosion and oxidation up to 800 Celcius degree. The main problem is connected with the synthesis of necessary raw materials for ceramics sintering. Earlier it was shown the possibility to implement one stage synthesis of main components using plasmodynamic method. This paper shows the experimental results about the influence of input energy value on the products of the plasmodynamic synthesis, which were characterized using X-ray diffractometry and transmission electron microscopy methods.
Original language | English |
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Title of host publication | Proceedings - 2016 11th International Forum on Strategic Technology, IFOST 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 165-169 |
Number of pages | 5 |
ISBN (Electronic) | 9781509008551 |
DOIs | |
Publication status | Published - 21 Mar 2017 |
Event | 11th International Forum on Strategic Technology, IFOST 2016 - Novosibirsk, Russian Federation Duration: 1 Jun 2016 → 3 Jun 2016 |
Conference
Conference | 11th International Forum on Strategic Technology, IFOST 2016 |
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Country | Russian Federation |
City | Novosibirsk |
Period | 1.6.16 → 3.6.16 |
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Keywords
- discharge plasma
- plasmodynamic synthesis
- titanium nitride
- titanium silicide
ASJC Scopus subject areas
- Ceramics and Composites
- Computational Mathematics
- Computer Science Applications
- Mechanical Engineering
- Mechanics of Materials
- Electronic, Optical and Magnetic Materials
- Control and Optimization
Cite this
Influence of input energy on nanosized product of Ti-Si-N system obtained by plasmodynamic method. / Sivkov, Alexander; Gerasimov, Dmitriy; Saigash, Anastasia; Shanenkov, Ivan.
Proceedings - 2016 11th International Forum on Strategic Technology, IFOST 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 165-169 7884074.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Influence of input energy on nanosized product of Ti-Si-N system obtained by plasmodynamic method
AU - Sivkov, Alexander
AU - Gerasimov, Dmitriy
AU - Saigash, Anastasia
AU - Shanenkov, Ivan
PY - 2017/3/21
Y1 - 2017/3/21
N2 - Composite ceramics TiN/Ti5Si3 is of a great interest due to its high hardness, fracture toughness, electrical conductivity and uniquely high resistance to erosion and oxidation up to 800 Celcius degree. The main problem is connected with the synthesis of necessary raw materials for ceramics sintering. Earlier it was shown the possibility to implement one stage synthesis of main components using plasmodynamic method. This paper shows the experimental results about the influence of input energy value on the products of the plasmodynamic synthesis, which were characterized using X-ray diffractometry and transmission electron microscopy methods.
AB - Composite ceramics TiN/Ti5Si3 is of a great interest due to its high hardness, fracture toughness, electrical conductivity and uniquely high resistance to erosion and oxidation up to 800 Celcius degree. The main problem is connected with the synthesis of necessary raw materials for ceramics sintering. Earlier it was shown the possibility to implement one stage synthesis of main components using plasmodynamic method. This paper shows the experimental results about the influence of input energy value on the products of the plasmodynamic synthesis, which were characterized using X-ray diffractometry and transmission electron microscopy methods.
KW - discharge plasma
KW - plasmodynamic synthesis
KW - titanium nitride
KW - titanium silicide
UR - http://www.scopus.com/inward/record.url?scp=85017285306&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85017285306&partnerID=8YFLogxK
U2 - 10.1109/IFOST.2016.7884074
DO - 10.1109/IFOST.2016.7884074
M3 - Conference contribution
AN - SCOPUS:85017285306
SP - 165
EP - 169
BT - Proceedings - 2016 11th International Forum on Strategic Technology, IFOST 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -