Influence of electric field on the photoluminescence of silicon nanocrystals

E. N. Vandyshev, K. S. Zhuravlev, A. M. Gilinsky, V. M. Lisitsyn, W. Skorupa

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We studied the effect of electric field generated on photoluminescence (PL) of silicon nanocrystals embedded in SiO2 films. We show that the application of electric field generated by means of surface acoustic waves (SAW) results in an increase of the PL intensity of nanocrystal photoluminescence by as much as 10% at a field amplitude of 12 kV/cm at temperatures below 15 K. At temperatures above 20 K the PL intensity decreases as the electric field is applied. The results are discussed within the frame of the self-trapped exciton model.

Original languageEnglish
Pages (from-to)297-300
Number of pages4
JournalThin Solid Films
Volume493
Issue number1-2
DOIs
Publication statusPublished - 22 Dec 2005

Keywords

  • Photoluminescence
  • Self-trapped exciton
  • Silicon nanocrystals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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