Influence of an initial chemical state of cation impurities on their diffusion in ionic crystals

S. A. Ghyngazov, T. S. Frangulyan, A. V. Chernyavskii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Depth profiles of magnesium, fluorine and oxygen impurities was examined in the surface layers of alkali-halide crystals using method of secondary ion mass spectrometry. Samples of potassium bromide, coated with a surface film of magnesium fluoride were subjected to isothermal diffusion annealing in air at various times. It is shown that the diffusion of O ions occurs from the ambient atmosphere besides the diffusion of Mg and F ions during annealing of KBr crystals. Accurate estimation of the diffusion coefficients of cationic impurity Mg requires taking into account the possible interaction of this impurity and oxygen. The effect of an intensive electron beam on diffusion of magnesium impurity in crystals of fluoride of lithium is studied.

Original languageEnglish
Title of host publication2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479971022
DOIs
Publication statusPublished - 1 Jul 2015
Event2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation
Duration: 21 May 201523 May 2015

Other

Other2015 International Siberian Conference on Control and Communications, SIBCON 2015
CountryRussian Federation
CityOmsk
Period21.5.1523.5.15

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Keywords

  • alkali-halide crystals
  • diffusion
  • secondary ion mass spectrometry

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Control and Systems Engineering

Cite this

Ghyngazov, S. A., Frangulyan, T. S., & Chernyavskii, A. V. (2015). Influence of an initial chemical state of cation impurities on their diffusion in ionic crystals. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147277] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147277