INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY.

S. N. Artemenko, A. A. Kal'fa, Sh M. Kogan, V. I. Sidorov

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages1405-1408
Number of pages4
Volume8
Edition11
Publication statusPublished - May 1975

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Artemenko, S. N., Kal'fa, A. A., Kogan, S. M., & Sidorov, V. I. (1975). INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. In Sov Phys Semicond (11 ed., Vol. 8, pp. 1405-1408)