An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.
|Title of host publication||Sov Phys Semicond|
|Number of pages||4|
|Publication status||Published - May 1975|
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