INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY.

S. N. Artemenko, A. A. Kal'fa, Sh M. Kogan, V. I. Sidorov

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Citations (Scopus)

Abstract

An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.

Original languageEnglish
Title of host publicationSov Phys Semicond
Pages1405-1408
Number of pages4
Volume8
Edition11
Publication statusPublished - May 1975

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Ionization
Impurities
Semiconductor materials
Gallium
Barium
Germanium
Light absorption

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Artemenko, S. N., Kal'fa, A. A., Kogan, S. M., & Sidorov, V. I. (1975). INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. In Sov Phys Semicond (11 ed., Vol. 8, pp. 1405-1408)

INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. / Artemenko, S. N.; Kal'fa, A. A.; Kogan, Sh M.; Sidorov, V. I.

Sov Phys Semicond. Vol. 8 11. ed. 1975. p. 1405-1408.

Research output: Chapter in Book/Report/Conference proceedingChapter

Artemenko, SN, Kal'fa, AA, Kogan, SM & Sidorov, VI 1975, INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. in Sov Phys Semicond. 11 edn, vol. 8, pp. 1405-1408.
Artemenko, S. N. ; Kal'fa, A. A. ; Kogan, Sh M. ; Sidorov, V. I. / INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY. Sov Phys Semicond. Vol. 8 11. ed. 1975. pp. 1405-1408
@inbook{4ca59b51e4d446bfaf6ac19a22980371,
title = "INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY.",
abstract = "An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.",
author = "Artemenko, {S. N.} and Kal'fa, {A. A.} and Kogan, {Sh M.} and Sidorov, {V. I.}",
year = "1975",
month = "5",
language = "English",
volume = "8",
pages = "1405--1408",
booktitle = "Sov Phys Semicond",
edition = "11",

}

TY - CHAP

T1 - INFLUENCE OF AN ELECTRICALLY INACTIVE IMPURITY ON THE WIDTH OF PHOTOTHERMAL IONIZATION LINES OF A DIFFERENT SHALLOW IMPURITY.

AU - Artemenko, S. N.

AU - Kal'fa, A. A.

AU - Kogan, Sh M.

AU - Sidorov, V. I.

PY - 1975/5

Y1 - 1975/5

N2 - An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.

AB - An investigation was made of the influence of an electrically inactive impurity in a semiconductor on the profile of optical absorption lines and on the photothermal ionization of a different (shallow) impurity in the same semiconductor. Several mechanisms of the line broadening are considered theoretically. The results are given of an experimental study of the influence of a barium impurity on the photothermal ionization line of a gallium impurity in germanium.

UR - http://www.scopus.com/inward/record.url?scp=0016510439&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0016510439&partnerID=8YFLogxK

M3 - Chapter

VL - 8

SP - 1405

EP - 1408

BT - Sov Phys Semicond

ER -