INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

A. P. Mamontov, V. V. Peshev, I. P. Chernov

Research output: Contribution to journalArticle

Abstract

The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

Original languageEnglish
Pages (from-to)1371-1372
Number of pages2
JournalSoviet physics. Semiconductors
Volume16
Issue number12
Publication statusPublished - Dec 1982

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ASJC Scopus subject areas

  • Engineering(all)

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