INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

A. P. Mamontov, V. V. Peshev, I. P. Chernov

Research output: Contribution to journalArticle

Abstract

The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

Original languageEnglish
Pages (from-to)1371-1372
Number of pages2
JournalSoviet physics. Semiconductors
Volume16
Issue number12
Publication statusPublished - Dec 1982

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Gallium arsenide
Electric space charge
Electric fields
Annealing
Radiation
Defects
Deep level transient spectroscopy
Gamma rays
Capacitance
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE. / Mamontov, A. P.; Peshev, V. V.; Chernov, I. P.

In: Soviet physics. Semiconductors, Vol. 16, No. 12, 12.1982, p. 1371-1372.

Research output: Contribution to journalArticle

@article{f3556ee8f152405b9d90fe709cd63f6f,
title = "INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.",
abstract = "The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.",
author = "Mamontov, {A. P.} and Peshev, {V. V.} and Chernov, {I. P.}",
year = "1982",
month = "12",
language = "English",
volume = "16",
pages = "1371--1372",
journal = "Soviet physics. Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

AU - Mamontov, A. P.

AU - Peshev, V. V.

AU - Chernov, I. P.

PY - 1982/12

Y1 - 1982/12

N2 - The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

AB - The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.

UR - http://www.scopus.com/inward/record.url?scp=0020313231&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020313231&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020313231

VL - 16

SP - 1371

EP - 1372

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 12

ER -