The capacitance method of deep-level transient spectroscopy was used to investigate the temperature dependence of the accumulation of the E3 centers in the space charge layer and in the neutral bulk of gallium arsenide irradiated with **6**0Co gamma rays. The dependence obtained for this space charge layer was very different from that for the neutral bulk.
|Number of pages||2|
|Journal||Soviet physics. Semiconductors|
|Publication status||Published - Dec 1982|
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