Abstract
Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.
| Original language | English |
|---|---|
| Pages (from-to) | 348-352 |
| Number of pages | 5 |
| Journal | Surface and Coatings Technology |
| Volume | 357 |
| DOIs | |
| Publication status | Published - 15 Jan 2019 |
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Keywords
- Al-Si-N interlayer
- HFCVD diamond film
- HIPIMS sputtering
- Residual stress
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings. / Gaydaychuk, A.; Zenkin, S.; Linnik, S.
In: Surface and Coatings Technology, Vol. 357, 15.01.2019, p. 348-352.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings
AU - Gaydaychuk, A.
AU - Zenkin, S.
AU - Linnik, S.
PY - 2019/1/15
Y1 - 2019/1/15
N2 - Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.
AB - Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.
KW - Al-Si-N interlayer
KW - HFCVD diamond film
KW - HIPIMS sputtering
KW - Residual stress
UR - http://www.scopus.com/inward/record.url?scp=85054995981&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054995981&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2018.10.030
DO - 10.1016/j.surfcoat.2018.10.030
M3 - Article
AN - SCOPUS:85054995981
VL - 357
SP - 348
EP - 352
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
ER -