Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings

Research output: Contribution to journalArticle

Abstract

Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.

Original languageEnglish
Pages (from-to)348-352
Number of pages5
JournalSurface and Coatings Technology
Volume357
DOIs
Publication statusPublished - 15 Jan 2019

Fingerprint

Diamond
residual stress
Chemical vapor deposition
interlayers
Residual stresses
Diamonds
diamonds
vapor deposition
coatings
Coatings
Diamond films
Nitrides
Transition metals
Sputtering
Carbides
diamond films
Deposits
carbides
nitrides
impulses

Keywords

  • Al-Si-N interlayer
  • HFCVD diamond film
  • HIPIMS sputtering
  • Residual stress

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings",
abstract = "Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.",
keywords = "Al-Si-N interlayer, HFCVD diamond film, HIPIMS sputtering, Residual stress",
author = "A. Gaydaychuk and S. Zenkin and S. Linnik",
year = "2019",
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day = "15",
doi = "10.1016/j.surfcoat.2018.10.030",
language = "English",
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journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",

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TY - JOUR

T1 - Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings

AU - Gaydaychuk, A.

AU - Zenkin, S.

AU - Linnik, S.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.

AB - Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.

KW - Al-Si-N interlayer

KW - HFCVD diamond film

KW - HIPIMS sputtering

KW - Residual stress

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DO - 10.1016/j.surfcoat.2018.10.030

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JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

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