Abstract
Here we report the novel interlayer for the high-quality CVD diamond thin films with reduced residual stress. We used the novel sputtering technique of reactive high power impulse magnetron suttering (r-HiPIMS) which allows us to deposit high quality, void- and defect-free AlSiN interlayer films. The film based on Al-Si-N system shows fully amorphous structure at temperature of diamond film synthesis (800 °C), inertness to diamond and hard WC-Co alloy at elevated temperatures and reduction of the diamond macrostress up to −0.25 GPa for film with AlSiN interlayer. Additionally, varying the Al content in Al-Si-N film we can finely tune its mechanical properties and total stress in substrate – AlSiN – diamond system. We show that AlSiN with the combination of its properties overcomes conventionally used interlayer materials for CVD-diamond such as transition metals or their nitrides and carbides.
Original language | English |
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Pages (from-to) | 348-352 |
Number of pages | 5 |
Journal | Surface and Coatings Technology |
Volume | 357 |
DOIs | |
Publication status | Published - 15 Jan 2019 |
Keywords
- Al-Si-N interlayer
- HFCVD diamond film
- HIPIMS sputtering
- Residual stress
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry