Influence irradiation argon ion SnO2 on optical and electrical characteristics

O. Asainov, S. Umnov, V. Temenkov

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Tin oxide in the form of films has been deposited by reactive magnetron sputtering on glass substrates a room temperature. Process was carried out in such mode when the deposited films were conductive. The deposited films were irradiated with argon ions. Have been studied happening at that the changes optical and electric properties of films. Have been investigated optical properties of films in the range of 300-1100 nanometers by means of photometry. For research structure of films was used the x-ray diffractometry. Diffractometric researches have shown that the films deposited on a substrate have crystal structure from shares of a quasicrystal phase and after influence of argon ions she completely became quasicrystal. It is established that change transmission of a film correlates with change her electric resistance. Average value transmission in the range of 380-1100 nanometers as well as the electric resistance of a film with growth of irradiation time increases to the values exceeding initial. At the same time at irradiation time ∼ 13,2 sec. are observed their slight decrease. To this value of irradiation time there corresponds the minimum value of electric resistance and transmission films. Change of transmission coefficient correlates with change of surface resistance.

Original languageEnglish
Article number012007
JournalIOP Conference Series: Materials Science and Engineering
Issue number1
Publication statusPublished - 7 Feb 2017
Event12th International Conference Radiation-Thermal Effects and Processes in Inorganic Materials - Tomsk, Russian Federation
Duration: 4 Sep 201612 Sep 2016

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

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