Indirect thermal measurement on SIC JFET transistors

Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Jean Claude Faugières

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module.

Original languageEnglish
Title of host publication2009 13th European Conference on Power Electronics and Applications, EPE '09
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event2009 13th European Conference on Power Electronics and Applications, EPE '09 - Barcelona, Spain
Duration: 8 Sep 200910 Sep 2009

Publication series

Name2009 13th European Conference on Power Electronics and Applications, EPE '09

Conference

Conference2009 13th European Conference on Power Electronics and Applications, EPE '09
CountrySpain
CityBarcelona
Period8.9.0910.9.09

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Keywords

  • JFET
  • Reliability
  • SiC
  • Temperature estimation
  • Thermal impedance

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Moumen, S., Lefebvre, S., Khatir, Z., & Faugières, J. C. (2009). Indirect thermal measurement on SIC JFET transistors. In 2009 13th European Conference on Power Electronics and Applications, EPE '09 [5278880] (2009 13th European Conference on Power Electronics and Applications, EPE '09).