Increase resource power electronics module on the physics of failure method

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis. The integrated assessment of reliability based on the methods of physics failures. The necessity of taking into account the actual non-stationary temperature fields to improve the reliability of the forecast operating life of power semiconductor devices.

Original languageEnglish
Title of host publicationMATEC Web of Conferences
PublisherEDP Sciences
Volume19
DOIs
Publication statusPublished - 15 Dec 2014
Event2nd International Youth Forum "Smart Grids" - Tomsk, Russian Federation
Duration: 6 Oct 201410 Oct 2014

Other

Other2nd International Youth Forum "Smart Grids"
CountryRussian Federation
CityTomsk
Period6.10.1410.10.14

Fingerprint

Power electronics
Temperature distribution
Physics
Natural convection
Numerical analysis
Power semiconductor devices
Hot Temperature
Statistical Data Interpretation

ASJC Scopus subject areas

  • Chemistry(all)
  • Engineering(all)
  • Materials Science(all)

Cite this

Increase resource power electronics module on the physics of failure method. / Kravchenko, Evgeniy Vladimirovich; Kuznetsov, Geniy V.

MATEC Web of Conferences. Vol. 19 EDP Sciences, 2014. 01028.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kravchenko, EV & Kuznetsov, GV 2014, Increase resource power electronics module on the physics of failure method. in MATEC Web of Conferences. vol. 19, 01028, EDP Sciences, 2nd International Youth Forum "Smart Grids", Tomsk, Russian Federation, 6.10.14. https://doi.org/10.1051/matecconf/20141901028
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