Abstract
The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface.
| Original language | English |
|---|---|
| Pages (from-to) | 1966-1970 |
| Number of pages | 5 |
| Journal | Microelectronics Reliability |
| Volume | 55 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 1 Aug 2015 |
| Externally published | Yes |
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Keywords
- Crystal orientation mapping
- Failure analysis
- Focused ion beam (FIB)
- Metallization microstructure aging
- Power device
- Scanning electron microscopy (SEM)
- Transmission electron microscopy (TEM)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Safety, Risk, Reliability and Quality
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
In-depth investigation of metallization aging in power MOSFETs. / Ruffilli, R.; Berkani, M.; Dupuy, P.; Lefebvre, S.; Weber, Y.; Legros, M.
In: Microelectronics Reliability, Vol. 55, No. 9-10, 01.08.2015, p. 1966-1970.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In-depth investigation of metallization aging in power MOSFETs
AU - Ruffilli, R.
AU - Berkani, M.
AU - Dupuy, P.
AU - Lefebvre, S.
AU - Weber, Y.
AU - Legros, M.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface.
AB - The long-term reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Previous studies have shown that the source metallization (top metal and wires) is a failure-prone location of the component. To study how the top aluminum metallization microstructure ages, we have performed ion and electron microscopy and mapped the grain structure before and after avalanche and short-circuit aging tests. The situation under the bond wires is significantly different as the bonding process induces plastic deformation prior to aging. Ion microscopy seems to show two inverse tendencies: grain growth under the wires and grain refinement elsewhere in the metallization. Transmission electron microscopy shows that the situation is more complex. Rearrangement of the initial defect and grain structure happen below and away from the wire. The most harmful fatigue cracks propagate parallel to the wire/metal bonding interface.
KW - Crystal orientation mapping
KW - Failure analysis
KW - Focused ion beam (FIB)
KW - Metallization microstructure aging
KW - Power device
KW - Scanning electron microscopy (SEM)
KW - Transmission electron microscopy (TEM)
UR - http://www.scopus.com/inward/record.url?scp=84943451834&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84943451834&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2015.06.036
DO - 10.1016/j.microrel.2015.06.036
M3 - Article
AN - SCOPUS:84943451834
VL - 55
SP - 1966
EP - 1970
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 9-10
ER -