Abstract
In this paper we present the results of our research of the impact of nanosecond volume discharge on the electronic properties of the near-surface region of epitaxial Hg1-xCdxTe films. We show that the distribution of the surface potential and, as a consequence, the material composition of the individual crystal grains that form V-defects possess a complex structure and contain regions with elevated content of both mercury and cadmium. The volume discharge treatment of the film surface leads to a decrease of the mercury content in individual crystal grains compared to the bulk of Hg1-xCdxTe epitaxial film. This indicates a higher mercury desorption rate from the V-defect region.
Original language | English |
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Article number | 095112 |
Journal | Journal of Physics D: Applied Physics |
Volume | 49 |
Issue number | 9 |
DOIs | |
Publication status | Published - 3 Feb 2016 |
Externally published | Yes |
Keywords
- contact potential difference
- fine films
- HgCdTe
- Kelvin force probe microscopy
- molecular beam epitaxy
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films