Impact of the nanosecond volume discharge in atmospheric pressure air on the distribution of the surface potential of epitaxial HgCdTe

V. A. Novikov, D. V. Grigoryev, D. A. Bezrodnyy, V. F. Tarasenko, Ivan Anisimovich Shulepov, S. A. Dvoretsky, N. N. Mikhailov

Research output: Contribution to journalArticle

Abstract

In this paper we present the results of our research of the impact of nanosecond volume discharge on the electronic properties of the near-surface region of epitaxial Hg1-xCdxTe films. We show that the distribution of the surface potential and, as a consequence, the material composition of the individual crystal grains that form V-defects possess a complex structure and contain regions with elevated content of both mercury and cadmium. The volume discharge treatment of the film surface leads to a decrease of the mercury content in individual crystal grains compared to the bulk of Hg1-xCdxTe epitaxial film. This indicates a higher mercury desorption rate from the V-defect region.

Original languageEnglish
Article number095112
JournalJournal of Physics D: Applied Physics
Volume49
Issue number9
DOIs
Publication statusPublished - 3 Feb 2016
Externally publishedYes

Keywords

  • contact potential difference
  • fine films
  • HgCdTe
  • Kelvin force probe microscopy
  • molecular beam epitaxy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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