Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

A. N. Razzhuvalov, S. N. Grinyaev

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

On the basis of a self-consistent solution of the Schrödinger and Poisson equations, the features of the tunnel-current hysteresis in w-GaN/AlGaN(0001) double-barrier structures are investigated. It is shown that the hysteresis loop depends on the mutual orientation of external and internal fields in the well and is wider at the voltage polarity when these fields compensate each other. Within the framework of the single-resonance approximation, a tunnel-current model in the double-barrier structure is developed, and the relation between the hysteresis-loop parameters and resonant states is found. It is established that the hysteresis loop can be relatively wide (∼4 V) even in geometrically symmetric structures with the participation of two resonances. In asymmetrical structures, the change in the growth-surface type results in enhancement or suppression of the hysteresis loop depending on the alternation of nonequivalent barriers.

Original languageEnglish
Pages (from-to)580-588
Number of pages9
JournalSemiconductors
Volume42
Issue number5
DOIs
Publication statusPublished - May 2008
Externally publishedYes

Fingerprint

Hysteresis loops
Hysteresis
tunnels
Tunnels
hysteresis
Poisson equation
alternations
polarity
aluminum gallium nitride
retarding
Electric potential
augmentation
electric potential
approximation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures. / Razzhuvalov, A. N.; Grinyaev, S. N.

In: Semiconductors, Vol. 42, No. 5, 05.2008, p. 580-588.

Research output: Contribution to journalArticle

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