Hydrogen determination in silicon nitride films by the nuclear recoil method

I. P. Chernov, V. N. Shadrin, Ju P. Cherdantsev, V. N. Sulema, L. V. Chramova, T. P. Smirnova, V. I. Belyi

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10 Citations (Scopus)

Abstract

The highly sensitive nuclear recoil method was used to determine the hydrogen concentration in silicon nitride films deposited by the ammonolysis of monosilane. Combination of the data obtained using this method with internal reflection spectroscopy data allowed us to estimate the absorption cross section ε(λ = 3.3 μm) for the NH bonds present in the films. The value of (5.9±1.2) × 10-20 cm2 obtained for ε(λ = 3.3 μm) is more reliable than values reported previously.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalThin Solid Films
Volume88
Issue number1
DOIs
Publication statusPublished - 5 Feb 1982

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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    Chernov, I. P., Shadrin, V. N., Cherdantsev, J. P., Sulema, V. N., Chramova, L. V., Smirnova, T. P., & Belyi, V. I. (1982). Hydrogen determination in silicon nitride films by the nuclear recoil method. Thin Solid Films, 88(1), 49-54. https://doi.org/10.1016/0040-6090(82)90349-2