Abstract
The highly sensitive nuclear recoil method was used to determine the hydrogen concentration in silicon nitride films deposited by the ammonolysis of monosilane. Combination of the data obtained using this method with internal reflection spectroscopy data allowed us to estimate the absorption cross section ε(λ = 3.3 μm) for the NH bonds present in the films. The value of (5.9±1.2) × 10-20 cm2 obtained for ε(λ = 3.3 μm) is more reliable than values reported previously.
Original language | English |
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Pages (from-to) | 49-54 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 88 |
Issue number | 1 |
DOIs | |
Publication status | Published - 5 Feb 1982 |
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces