High-voltage microsecond pulse generator for plasma immersion ion implantation

V. A. Vizir, V. B. Zorin, S. V. Ivanov, B. M. Kovalchuk, A. D. Maksimenko, V. I. Maniiov, G. V. Smorudov, N. G. Shubkin, V. V. Chervyakov

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The generator is intended to supply plasma immerse ion implanters [1], [2]. It has the following parameters: voltage pulse amplitude - (20÷60) kV, current pulse amplitude - (100÷40) A, pulse length - (5÷20) μs, leading edge length - 1 μs, decay length - 2 μs, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with partial capacity discharge. A high-power modulator tube GM1-29A1 (40 kV, 200 A) is used as a switch. A driver is made at a JGBT transistor. A pulse from modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing controlling the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 μs) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The generator has a load equivalent on the basis of a water resistor.The generator also can be used as an accelerating voltage power supply for charged particle beam sources.

    Original languageEnglish
    Title of host publicationPPPS 2001 - Pulsed Power Plasma Science 2001
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages721-722
    Number of pages2
    Volume1
    ISBN (Print)0780371208, 9780780371200
    DOIs
    Publication statusPublished - 2015
    Event28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference, PPPS 2001 - Las Vegas, United States
    Duration: 17 Jun 200122 Jun 2001

    Other

    Other28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference, PPPS 2001
    CountryUnited States
    CityLas Vegas
    Period17.6.0122.6.01

    Fingerprint

    Pulse generators
    pulse generators
    Ion implantation
    Modulators
    submerging
    ion implantation
    modulators
    high voltages
    Plasmas
    Electric potential
    generators
    power supplies
    pulse amplitude
    transformers
    electric potential
    switches
    pulses
    Switches
    control boards
    tubes

    ASJC Scopus subject areas

    • Energy Engineering and Power Technology
    • Nuclear Energy and Engineering
    • Nuclear and High Energy Physics

    Cite this

    Vizir, V. A., Zorin, V. B., Ivanov, S. V., Kovalchuk, B. M., Maksimenko, A. D., Maniiov, V. I., ... Chervyakov, V. V. (2015). High-voltage microsecond pulse generator for plasma immersion ion implantation. In PPPS 2001 - Pulsed Power Plasma Science 2001 (Vol. 1, pp. 721-722). [1002197] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPPS.2001.01002197

    High-voltage microsecond pulse generator for plasma immersion ion implantation. / Vizir, V. A.; Zorin, V. B.; Ivanov, S. V.; Kovalchuk, B. M.; Maksimenko, A. D.; Maniiov, V. I.; Smorudov, G. V.; Shubkin, N. G.; Chervyakov, V. V.

    PPPS 2001 - Pulsed Power Plasma Science 2001. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2015. p. 721-722 1002197.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Vizir, VA, Zorin, VB, Ivanov, SV, Kovalchuk, BM, Maksimenko, AD, Maniiov, VI, Smorudov, GV, Shubkin, NG & Chervyakov, VV 2015, High-voltage microsecond pulse generator for plasma immersion ion implantation. in PPPS 2001 - Pulsed Power Plasma Science 2001. vol. 1, 1002197, Institute of Electrical and Electronics Engineers Inc., pp. 721-722, 28th IEEE International Conference on Plasma Science and 13th IEEE International Pulsed Power Conference, PPPS 2001, Las Vegas, United States, 17.6.01. https://doi.org/10.1109/PPPS.2001.01002197
    Vizir VA, Zorin VB, Ivanov SV, Kovalchuk BM, Maksimenko AD, Maniiov VI et al. High-voltage microsecond pulse generator for plasma immersion ion implantation. In PPPS 2001 - Pulsed Power Plasma Science 2001. Vol. 1. Institute of Electrical and Electronics Engineers Inc. 2015. p. 721-722. 1002197 https://doi.org/10.1109/PPPS.2001.01002197
    Vizir, V. A. ; Zorin, V. B. ; Ivanov, S. V. ; Kovalchuk, B. M. ; Maksimenko, A. D. ; Maniiov, V. I. ; Smorudov, G. V. ; Shubkin, N. G. ; Chervyakov, V. V. / High-voltage microsecond pulse generator for plasma immersion ion implantation. PPPS 2001 - Pulsed Power Plasma Science 2001. Vol. 1 Institute of Electrical and Electronics Engineers Inc., 2015. pp. 721-722
    @inproceedings{16a10fd59445450d9bee3939e444e36f,
    title = "High-voltage microsecond pulse generator for plasma immersion ion implantation",
    abstract = "The generator is intended to supply plasma immerse ion implanters [1], [2]. It has the following parameters: voltage pulse amplitude - (20÷60) kV, current pulse amplitude - (100÷40) A, pulse length - (5÷20) μs, leading edge length - 1 μs, decay length - 2 μs, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with partial capacity discharge. A high-power modulator tube GM1-29A1 (40 kV, 200 A) is used as a switch. A driver is made at a JGBT transistor. A pulse from modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing controlling the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 μs) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The generator has a load equivalent on the basis of a water resistor.The generator also can be used as an accelerating voltage power supply for charged particle beam sources.",
    author = "Vizir, {V. A.} and Zorin, {V. B.} and Ivanov, {S. V.} and Kovalchuk, {B. M.} and Maksimenko, {A. D.} and Maniiov, {V. I.} and Smorudov, {G. V.} and Shubkin, {N. G.} and Chervyakov, {V. V.}",
    year = "2015",
    doi = "10.1109/PPPS.2001.01002197",
    language = "English",
    isbn = "0780371208",
    volume = "1",
    pages = "721--722",
    booktitle = "PPPS 2001 - Pulsed Power Plasma Science 2001",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",

    }

    TY - GEN

    T1 - High-voltage microsecond pulse generator for plasma immersion ion implantation

    AU - Vizir, V. A.

    AU - Zorin, V. B.

    AU - Ivanov, S. V.

    AU - Kovalchuk, B. M.

    AU - Maksimenko, A. D.

    AU - Maniiov, V. I.

    AU - Smorudov, G. V.

    AU - Shubkin, N. G.

    AU - Chervyakov, V. V.

    PY - 2015

    Y1 - 2015

    N2 - The generator is intended to supply plasma immerse ion implanters [1], [2]. It has the following parameters: voltage pulse amplitude - (20÷60) kV, current pulse amplitude - (100÷40) A, pulse length - (5÷20) μs, leading edge length - 1 μs, decay length - 2 μs, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with partial capacity discharge. A high-power modulator tube GM1-29A1 (40 kV, 200 A) is used as a switch. A driver is made at a JGBT transistor. A pulse from modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing controlling the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 μs) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The generator has a load equivalent on the basis of a water resistor.The generator also can be used as an accelerating voltage power supply for charged particle beam sources.

    AB - The generator is intended to supply plasma immerse ion implanters [1], [2]. It has the following parameters: voltage pulse amplitude - (20÷60) kV, current pulse amplitude - (100÷40) A, pulse length - (5÷20) μs, leading edge length - 1 μs, decay length - 2 μs, pulse frequency - up to 1000 Hz, average power - up to 10 kW. The generator is made by the scheme of a modulator with partial capacity discharge. A high-power modulator tube GM1-29A1 (40 kV, 200 A) is used as a switch. A driver is made at a JGBT transistor. A pulse from modulator is applied by the cable to the step-up pulsed transformer placed near the implanter. The transformer has a winding switch allowing controlling the output voltage from 20 to 60 kV at a distance by 6 steps. Smooth control is realized by the power supply. The modulator has the current protection of the power supply and rapid (0.5 μs) current protection of the modulator tube. The modulator can be controlled both from the local control board and at a distance - from the computer. The generator has a load equivalent on the basis of a water resistor.The generator also can be used as an accelerating voltage power supply for charged particle beam sources.

    UR - http://www.scopus.com/inward/record.url?scp=84951935843&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84951935843&partnerID=8YFLogxK

    U2 - 10.1109/PPPS.2001.01002197

    DO - 10.1109/PPPS.2001.01002197

    M3 - Conference contribution

    AN - SCOPUS:84951935843

    SN - 0780371208

    SN - 9780780371200

    VL - 1

    SP - 721

    EP - 722

    BT - PPPS 2001 - Pulsed Power Plasma Science 2001

    PB - Institute of Electrical and Electronics Engineers Inc.

    ER -