High-temperature oxidation resistance of Ta-Si-N films with a high Si content

P. Zeman, J. Musil, R. Daniel

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The high-temperature oxidation resistance of ternary Ta-Si-N films with a high (≥ 20 at.%) Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C. Additional analyses including optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and the microhardness measurement were carried out as well. The obtained results showed an excellent high-temperature oxidation resistance Ta12Si26N62 films up to 1300 °C. A slight oxidation starts just above 800 °C and stops approximately at 1080 °C due to the formation of a thin barrier oxide layer composed dominantly of orthorhombic Ta2 O5 phase. The thickness of the oxide layer is almost constant with the annealing from 1080-1300 °C (hoxide/ hfilm ≈ 18%), however, the crystallinity is much improved. The microhardness decreases from 25 to 16 GPa with increasing annealing temperature due to the formation of the oxide layer of a lower microhardness. The microhardness and the oxide layer thickness almost do not change with increasing annealing time up to 1 h at a constant annealing temperature of 1300 °C.

Original languageEnglish
Pages (from-to)4091-4096
Number of pages6
JournalSurface and Coatings Technology
Volume200
Issue number12-13
DOIs
Publication statusPublished - 31 Mar 2006

Fingerprint

Thermooxidation
oxidation resistance
Oxidation resistance
Microhardness
microhardness
Oxides
Annealing
annealing
oxides
Reactive sputtering
Silicon
thermogravimetry
Magnetron sputtering
Temperature
Optical microscopy
temperature
Thermogravimetric analysis
crystallinity
magnetron sputtering
microscopy

Keywords

  • Oxidation resistance
  • Sputtering
  • Ta-Si-N films
  • Thermogravimetry

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

High-temperature oxidation resistance of Ta-Si-N films with a high Si content. / Zeman, P.; Musil, J.; Daniel, R.

In: Surface and Coatings Technology, Vol. 200, No. 12-13, 31.03.2006, p. 4091-4096.

Research output: Contribution to journalArticle

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