Abstract
The high-temperature oxidation resistance of ternary Ta-Si-N films with a high (≥ 20 at.%) Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C. Additional analyses including optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and the microhardness measurement were carried out as well. The obtained results showed an excellent high-temperature oxidation resistance Ta12Si26N62 films up to 1300 °C. A slight oxidation starts just above 800 °C and stops approximately at 1080 °C due to the formation of a thin barrier oxide layer composed dominantly of orthorhombic Ta2 O5 phase. The thickness of the oxide layer is almost constant with the annealing from 1080-1300 °C (hoxide/ hfilm ≈ 18%), however, the crystallinity is much improved. The microhardness decreases from 25 to 16 GPa with increasing annealing temperature due to the formation of the oxide layer of a lower microhardness. The microhardness and the oxide layer thickness almost do not change with increasing annealing time up to 1 h at a constant annealing temperature of 1300 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 4091-4096 |
| Number of pages | 6 |
| Journal | Surface and Coatings Technology |
| Volume | 200 |
| Issue number | 12-13 |
| DOIs | |
| Publication status | Published - 31 Mar 2006 |
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Keywords
- Oxidation resistance
- Sputtering
- Ta-Si-N films
- Thermogravimetry
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
High-temperature oxidation resistance of Ta-Si-N films with a high Si content. / Zeman, P.; Musil, J.; Daniel, R.
In: Surface and Coatings Technology, Vol. 200, No. 12-13, 31.03.2006, p. 4091-4096.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-temperature oxidation resistance of Ta-Si-N films with a high Si content
AU - Zeman, P.
AU - Musil, J.
AU - Daniel, R.
PY - 2006/3/31
Y1 - 2006/3/31
N2 - The high-temperature oxidation resistance of ternary Ta-Si-N films with a high (≥ 20 at.%) Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C. Additional analyses including optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and the microhardness measurement were carried out as well. The obtained results showed an excellent high-temperature oxidation resistance Ta12Si26N62 films up to 1300 °C. A slight oxidation starts just above 800 °C and stops approximately at 1080 °C due to the formation of a thin barrier oxide layer composed dominantly of orthorhombic Ta2 O5 phase. The thickness of the oxide layer is almost constant with the annealing from 1080-1300 °C (hoxide/ hfilm ≈ 18%), however, the crystallinity is much improved. The microhardness decreases from 25 to 16 GPa with increasing annealing temperature due to the formation of the oxide layer of a lower microhardness. The microhardness and the oxide layer thickness almost do not change with increasing annealing time up to 1 h at a constant annealing temperature of 1300 °C.
AB - The high-temperature oxidation resistance of ternary Ta-Si-N films with a high (≥ 20 at.%) Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C. Additional analyses including optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and the microhardness measurement were carried out as well. The obtained results showed an excellent high-temperature oxidation resistance Ta12Si26N62 films up to 1300 °C. A slight oxidation starts just above 800 °C and stops approximately at 1080 °C due to the formation of a thin barrier oxide layer composed dominantly of orthorhombic Ta2 O5 phase. The thickness of the oxide layer is almost constant with the annealing from 1080-1300 °C (hoxide/ hfilm ≈ 18%), however, the crystallinity is much improved. The microhardness decreases from 25 to 16 GPa with increasing annealing temperature due to the formation of the oxide layer of a lower microhardness. The microhardness and the oxide layer thickness almost do not change with increasing annealing time up to 1 h at a constant annealing temperature of 1300 °C.
KW - Oxidation resistance
KW - Sputtering
KW - Ta-Si-N films
KW - Thermogravimetry
UR - http://www.scopus.com/inward/record.url?scp=32644461597&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=32644461597&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2005.02.097
DO - 10.1016/j.surfcoat.2005.02.097
M3 - Article
AN - SCOPUS:32644461597
VL - 200
SP - 4091
EP - 4096
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 12-13
ER -