High-temperature oxidation resistance of Ta-Si-N films with a high Si content

P. Zeman, J. Musil, R. Daniel

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)


The high-temperature oxidation resistance of ternary Ta-Si-N films with a high (≥ 20 at.%) Si content deposited by reactive dc magnetron sputtering on silicon substrates was systematically investigated by means of a symmetrical high-resolution thermogravimetry in a flowing air up to an annealing temperature of 1300 °C. Additional analyses including optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) and the microhardness measurement were carried out as well. The obtained results showed an excellent high-temperature oxidation resistance Ta12Si26N62 films up to 1300 °C. A slight oxidation starts just above 800 °C and stops approximately at 1080 °C due to the formation of a thin barrier oxide layer composed dominantly of orthorhombic Ta2 O5 phase. The thickness of the oxide layer is almost constant with the annealing from 1080-1300 °C (hoxide/ hfilm ≈ 18%), however, the crystallinity is much improved. The microhardness decreases from 25 to 16 GPa with increasing annealing temperature due to the formation of the oxide layer of a lower microhardness. The microhardness and the oxide layer thickness almost do not change with increasing annealing time up to 1 h at a constant annealing temperature of 1300 °C.

Original languageEnglish
Pages (from-to)4091-4096
Number of pages6
JournalSurface and Coatings Technology
Issue number12-13
Publication statusPublished - 31 Mar 2006


  • Oxidation resistance
  • Sputtering
  • Ta-Si-N films
  • Thermogravimetry

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High-temperature oxidation resistance of Ta-Si-N films with a high Si content'. Together they form a unique fingerprint.

Cite this