Abstract
The paper reports on a reactive deposition of transparent SiO2 films with a low amount (≤ 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate a D of the transparent oxide film strongly increases at the critical target power density (Wt)cr when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
| Original language | English |
|---|---|
| Pages (from-to) | 775-777 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Nov 2010 |
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Keywords
- Deposition rate
- Evaporation
- Molten target
- Reactive deposition
- Sputtering
- Target power density
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target. / Musil, Jindrich; Satava, Vaclav; Baroch, Pavel.
In: Thin Solid Films, Vol. 519, No. 2, 01.11.2010, p. 775-777.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
AU - Musil, Jindrich
AU - Satava, Vaclav
AU - Baroch, Pavel
PY - 2010/11/1
Y1 - 2010/11/1
N2 - The paper reports on a reactive deposition of transparent SiO2 films with a low amount (≤ 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate a D of the transparent oxide film strongly increases at the critical target power density (Wt)cr when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
AB - The paper reports on a reactive deposition of transparent SiO2 films with a low amount (≤ 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate a D of the transparent oxide film strongly increases at the critical target power density (Wt)cr when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
KW - Deposition rate
KW - Evaporation
KW - Molten target
KW - Reactive deposition
KW - Sputtering
KW - Target power density
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=77958493833&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77958493833&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.09.009
DO - 10.1016/j.tsf.2010.09.009
M3 - Article
AN - SCOPUS:77958493833
VL - 519
SP - 775
EP - 777
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 2
ER -