Abstract
The paper reports on a reactive deposition of transparent SiO2 films with a low amount (≤ 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron. It is shown that the deposition rate a D of the transparent oxide film strongly increases at the critical target power density (Wt)cr when the solid target starts to melt and the magnetron operates with a molten target. In this case, the evaporation of target material plays a dominant role in the reactive deposition of thin films. This process is called the ionized magnetron evaporation. Oxide films reactively deposited from the molten target are well transparent and highly elastic. The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
Original language | English |
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Pages (from-to) | 775-777 |
Number of pages | 3 |
Journal | Thin Solid Films |
Volume | 519 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Nov 2010 |
Keywords
- Deposition rate
- Evaporation
- Molten target
- Reactive deposition
- Sputtering
- Target power density
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry