High-rate deposition of thin films by high-power ion beam

I. F. Isakov, G. E. Remnev, A. N. Zakutayev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The results on the deposition of thin elemental and compound films by means of a high-power ion beam are presented. The TEMP accelerator (an ion energy of 300 keV, a current density of 100-150 A/cm 2 on a target, a pulse repetition rate of 0.3 Hz, a vacuum of 10 4 Torr) was used. The thin metallic (Cd, Zn and other) and stoichiometric Y 1-Ba 2-Cu 3-O 7-x films were obtained. The film growth rate was (0.3-1)·10 8 Å/s. The results show (i) the metallic films were continuous with very smooth surface morphology when they were examined by scanning electron microscopy, and (ii) transmission electron diffraction and transmission electron microscopy indicated small grain polycrystalline metallic films, and (iii) by Rutherford backward scattering and Auger electron spectroscopy it is shown that the stoichiometric Y 1-Ba 2-Cu 3-O 7-x films can be deposited at relatively low substrate temperature 300-450C.

Original languageEnglish
Title of host publicationBeams 92 - Proceedings of the 9th International Conference on High-Power Particle Beams
Pages1966-1970
Number of pages5
Volume3
Publication statusPublished - 1992
Event9th International Conference on High-Power Particle Beams, Beams 92 - Washington, DC, United States
Duration: 25 May 209229 May 2092

Other

Other9th International Conference on High-Power Particle Beams, Beams 92
CountryUnited States
CityWashington, DC
Period25.5.9229.5.92

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

Isakov, I. F., Remnev, G. E., & Zakutayev, A. N. (1992). High-rate deposition of thin films by high-power ion beam. In Beams 92 - Proceedings of the 9th International Conference on High-Power Particle Beams (Vol. 3, pp. 1966-1970). [6306848]