High-rate deposition of thin films by high-intensity pulsed ion beam evaporation

A. N. Zakoutayev, G. E. Remnev, Yu F. Ivanov, M. S. Arteyev, V. M. Matvienko, A. V. Potyomkin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages317-322
Number of pages6
Volume388
Publication statusPublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 17 Apr 199521 Apr 1995

Other

OtherProceedings of the 1995 MRS Spring Meeting
CitySan Francisco, CA, USA
Period17.4.9521.4.95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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