Abstract
A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 317-322 |
| Number of pages | 6 |
| Volume | 388 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 17 Apr 1995 → 21 Apr 1995 |
Other
| Other | Proceedings of the 1995 MRS Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 17.4.95 → 21.4.95 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
High-rate deposition of thin films by high-intensity pulsed ion beam evaporation. / Zakoutayev, A. N.; Remnev, G. E.; Ivanov, Yu F.; Arteyev, M. S.; Matvienko, V. M.; Potyomkin, A. V.
Materials Research Society Symposium - Proceedings. Vol. 388 Materials Research Society, 1995. p. 317-322.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High-rate deposition of thin films by high-intensity pulsed ion beam evaporation
AU - Zakoutayev, A. N.
AU - Remnev, G. E.
AU - Ivanov, Yu F.
AU - Arteyev, M. S.
AU - Matvienko, V. M.
AU - Potyomkin, A. V.
PY - 1995
Y1 - 1995
N2 - A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.
AB - A high-intensity ion beam (500 keV, current density 60-200 A/cm 2, power density (0.25-1)·10 8 W/cm 2, pulse duration 60 ns, pulse repetition rate 4-6 min -1) was used to deposit thin metal and carbon films by evaporation of respective targets. The instantaneous deposition rate was 0.6-5 mm/s. The films were examined using transmission electron microscopy and transmission electron diffraction. The metal films had a polycrystalline structure with the grains measuring from 20 to 100 nm, the lower the melting point the greater the grain size. The carbon films contained 25-125 nm diamonds. The ablation plasma was studied employing methods of pulsed spectroscopy.
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M3 - Conference contribution
VL - 388
SP - 317
EP - 322
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -