High power pulse electron beam modification and ion implantation of Hg _1-xCd _xTe epitaxial structures

Hg _1-xCd _xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 ¹³-10 ¹⁷ cm ^-2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm ² electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm ² electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 ¹²-10 ¹⁶ cm ². Ion beams have the next parameters: (1-10) A/cm ² ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al ⁺, Al ⁺⁺, Al ⁺⁺⁺). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.