Abstract
Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 375-379 |
| Number of pages | 5 |
| Volume | 3182 |
| DOIs | |
| Publication status | Published - 1997 |
| Event | Material Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine Duration: 30 Sep 1996 → 30 Sep 1996 |
Other
| Other | Material Science and Material Properties for Infrared Optoelectronics |
|---|---|
| Country | Ukraine |
| City | Uzhgorod |
| Period | 30.9.96 → 30.9.96 |
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Keywords
- Epitaxial structures
- Hall effect
- Ion beams
- Lifetime
- Pulse electron beams
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures . / Voitsekhovskii, A. V.; Kokhanenko, A. P.; Denisov, Yu A.; Oucherenko, D. A.; Remnev, G. E.; Opekunov, M. S.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182 1997. p. 375-379.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures
AU - Voitsekhovskii, A. V.
AU - Kokhanenko, A. P.
AU - Denisov, Yu A.
AU - Oucherenko, D. A.
AU - Remnev, G. E.
AU - Opekunov, M. S.
PY - 1997
Y1 - 1997
N2 - Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.
AB - Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.
KW - Epitaxial structures
KW - Hall effect
KW - Ion beams
KW - Lifetime
KW - Pulse electron beams
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U2 - 10.1117/12.280460
DO - 10.1117/12.280460
M3 - Conference contribution
VL - 3182
SP - 375
EP - 379
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -