High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures

A. V. Voitsekhovskii, A. P. Kokhanenko, Yu A. Denisov, D. A. Oucherenko, G. E. Remnev, M. S. Opekunov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages375-379
Number of pages5
Volume3182
DOIs
Publication statusPublished - 1997
EventMaterial Science and Material Properties for Infrared Optoelectronics - Uzhgorod, Ukraine
Duration: 30 Sep 199630 Sep 1996

Other

OtherMaterial Science and Material Properties for Infrared Optoelectronics
CountryUkraine
CityUzhgorod
Period30.9.9630.9.96

Fingerprint

Ion Implantation
Electron Beam
Ion implantation
High Power
ion implantation
Electron beams
implantation
electron beams
Electron
Ions
Electrons
electron energy
pulses
ion distribution
Hall Effect
current density
Current density
Hall effect
Energy
Irradiation

Keywords

  • Epitaxial structures
  • Hall effect
  • Ion beams
  • Lifetime
  • Pulse electron beams

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Voitsekhovskii, A. V., Kokhanenko, A. P., Denisov, Y. A., Oucherenko, D. A., Remnev, G. E., & Opekunov, M. S. (1997). High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3182, pp. 375-379) https://doi.org/10.1117/12.280460

High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures . / Voitsekhovskii, A. V.; Kokhanenko, A. P.; Denisov, Yu A.; Oucherenko, D. A.; Remnev, G. E.; Opekunov, M. S.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182 1997. p. 375-379.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Voitsekhovskii, AV, Kokhanenko, AP, Denisov, YA, Oucherenko, DA, Remnev, GE & Opekunov, MS 1997, High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3182, pp. 375-379, Material Science and Material Properties for Infrared Optoelectronics, Uzhgorod, Ukraine, 30.9.96. https://doi.org/10.1117/12.280460
Voitsekhovskii AV, Kokhanenko AP, Denisov YA, Oucherenko DA, Remnev GE, Opekunov MS. High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182. 1997. p. 375-379 https://doi.org/10.1117/12.280460
Voitsekhovskii, A. V. ; Kokhanenko, A. P. ; Denisov, Yu A. ; Oucherenko, D. A. ; Remnev, G. E. ; Opekunov, M. S. / High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3182 1997. pp. 375-379
@inproceedings{bd51f59b65a946158843a3f0aa8a4ef1,
title = "High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures",
abstract = "Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.",
keywords = "Epitaxial structures, Hall effect, Ion beams, Lifetime, Pulse electron beams",
author = "Voitsekhovskii, {A. V.} and Kokhanenko, {A. P.} and Denisov, {Yu A.} and Oucherenko, {D. A.} and Remnev, {G. E.} and Opekunov, {M. S.}",
year = "1997",
doi = "10.1117/12.280460",
language = "English",
volume = "3182",
pages = "375--379",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - High power pulse electron beam modification and ion implantation of Hg 1-xCd xTe epitaxial structures

AU - Voitsekhovskii, A. V.

AU - Kokhanenko, A. P.

AU - Denisov, Yu A.

AU - Oucherenko, D. A.

AU - Remnev, G. E.

AU - Opekunov, M. S.

PY - 1997

Y1 - 1997

N2 - Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

AB - Hg 1-xCd xTe (MCT) samples epitaxial structures (x=0.21-0.23) are irradiated by pulse electron beams under the doze 10 13-10 17 cm -2. Electron beams have the next parameters: 500 keV energy electron (30-40 A/cm 2 electron current density, 60-80 ns current pulse); 200 keV energy electron (8-10 A/cm 2 electron current density, 100-200 ns current pulse). Electroconductivity and recombination of modificated samples are investigated by Hall effect and photoconductivity methods. For 200 keV electron energy beam irradiation of the n-type surface regions have been obtained under threshold mechanisms of donor defect generation. For 500 keV electron energy beam irradiation the maximum value of charge carrier lifetimes occur in p- to n-type conductivity conversion range for the initial ptype crystals due to the conductivity compensation. MCT samples (x = 0.21-0.22) are implanted by Al ions under the dose 10 12-10 16 cm 2. Ion beams have the next parameters: (1-10) A/cm 2 ion current density; (100-200) ns current pulse; (150-450) keV Al ion (Al +, Al ++, Al +++). The ion distribution and doping profiles were investigated by PIGE and Hall effect methods. The comparison between MCT samples after power pulse ion implantation and after standard ion implantation demonstrate a difference in ion distribution, doping profiles and defect formation radiation mechanisms.

KW - Epitaxial structures

KW - Hall effect

KW - Ion beams

KW - Lifetime

KW - Pulse electron beams

UR - http://www.scopus.com/inward/record.url?scp=57649107414&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=57649107414&partnerID=8YFLogxK

U2 - 10.1117/12.280460

DO - 10.1117/12.280460

M3 - Conference contribution

VL - 3182

SP - 375

EP - 379

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -