Abstract
Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.
| Original language | English |
|---|---|
| Pages (from-to) | 103-109 |
| Number of pages | 7 |
| Journal | Surface and Coatings Technology |
| Volume | 96 |
| Issue number | 1 |
| Publication status | Published - 3 Nov 1997 |
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Keywords
- High-power ion beams
- Short pulse ion implantation
- Surface modification
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
High-power ion beam sources for industrial application. / Remnev, G. E.; Isakov, I. F.; Opekounov, M. S.; Kotlyarevsky, G. I.; Kutuzov, V. L.; Lopatin, V. S.; Matvienko, V. M.; Ovsyannikov, M. Yu; Potyomkin, A. V.; Tarbokov, Vladislav Alexandrovich.
In: Surface and Coatings Technology, Vol. 96, No. 1, 03.11.1997, p. 103-109.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-power ion beam sources for industrial application
AU - Remnev, G. E.
AU - Isakov, I. F.
AU - Opekounov, M. S.
AU - Kotlyarevsky, G. I.
AU - Kutuzov, V. L.
AU - Lopatin, V. S.
AU - Matvienko, V. M.
AU - Ovsyannikov, M. Yu
AU - Potyomkin, A. V.
AU - Tarbokov, Vladislav Alexandrovich
PY - 1997/11/3
Y1 - 1997/11/3
N2 - Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.
AB - Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.
KW - High-power ion beams
KW - Short pulse ion implantation
KW - Surface modification
UR - http://www.scopus.com/inward/record.url?scp=0031551650&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031551650&partnerID=8YFLogxK
M3 - Article
VL - 96
SP - 103
EP - 109
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 1
ER -