Abstract
Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.
| Original language | English |
|---|---|
| Pages (from-to) | 103-109 |
| Number of pages | 7 |
| Journal | Surface and Coatings Technology |
| Volume | 96 |
| Issue number | 1 |
| Publication status | Published - 3 Nov 1997 |
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Keywords
- High-power ion beams
- Short pulse ion implantation
- Surface modification
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Remnev, G. E., Isakov, I. F., Opekounov, M. S., Kotlyarevsky, G. I., Kutuzov, V. L., Lopatin, V. S., ... Tarbokov, V. A. (1997). High-power ion beam sources for industrial application. Surface and Coatings Technology, 96(1), 103-109.