High-power ion beam sources for industrial application

Abstract

Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Alⁿ⁺ , Mgⁿ⁺ , Feⁿ⁺ , Wⁿ⁺ , etc.) were as follows: current density ranging from 1 to 10 A cm^-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H⁺ and Cⁿ⁺ ions: current density 40-200 A cm^-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.

Original language	English
Pages (from-to)	103-109
Number of pages	7
Journal	Surface and Coatings Technology
Volume	96
Issue number	1
Publication status	Published - 3 Nov 1997

Keywords

High-power ion beams
Short pulse ion implantation
Surface modification

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

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High-power ion beam sources for industrial application. / Remnev, G. E.; Isakov, I. F.; Opekounov, M. S.; Kotlyarevsky, G. I.; Kutuzov, V. L.; Lopatin, V. S.; Matvienko, V. M.; Ovsyannikov, M. Yu; Potyomkin, A. V.; Tarbokov, Vladislav Alexandrovich.

In: Surface and Coatings Technology, Vol. 96, No. 1, 03.11.1997, p. 103-109.

Research output: Contribution to journal › Article › peer-review

@article{12c720e60de44adc8436eedad486bc58,

title = "High-power ion beam sources for industrial application",

abstract = "Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.",

keywords = "High-power ion beams, Short pulse ion implantation, Surface modification",

author = "Remnev, {G. E.} and Isakov, {I. F.} and Opekounov, {M. S.} and Kotlyarevsky, {G. I.} and Kutuzov, {V. L.} and Lopatin, {V. S.} and Matvienko, {V. M.} and Ovsyannikov, {M. Yu} and Potyomkin, {A. V.} and Tarbokov, {Vladislav Alexandrovich}",

year = "1997",

month = nov,

day = "3",

language = "English",

volume = "96",

pages = "103--109",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - High-power ion beam sources for industrial application

AU - Remnev, G. E.

AU - Isakov, I. F.

AU - Opekounov, M. S.

AU - Kotlyarevsky, G. I.

AU - Kutuzov, V. L.

AU - Lopatin, V. S.

AU - Matvienko, V. M.

AU - Ovsyannikov, M. Yu

AU - Potyomkin, A. V.

AU - Tarbokov, Vladislav Alexandrovich

PY - 1997/11/3

Y1 - 1997/11/3

N2 - Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.

AB - Two sources of high-power ion beams of nanosecond duration are described, a MUK and a TEMP unit They generated ions with energies of up to 150 and 300 keV, respectively, and the pulse duration was 20-200 and 50 ns, respectively. For the MUK unit, beam parameters for heavy ion implantation (Aln+ , Mgn+ , Fen+ , Wn+ , etc.) were as follows: current density ranging from 1 to 10 A cm-2 and total ion flux energy up to 20 J. For the TEMP unit, the following beam parameters were used for H+ and Cn+ ions: current density 40-200 A cm-2 and total ion flux energy 0.3-0.5 kJ. The sources are powered by various diode systems and can be applied in material science for scientific research and technology.

KW - High-power ion beams

KW - Short pulse ion implantation

KW - Surface modification

UR - http://www.scopus.com/inward/record.url?scp=0031551650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031551650&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031551650

VL - 96

SP - 103

EP - 109

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1

ER -

High-power ion beam sources for industrial application

Abstract

Keywords

ASJC Scopus subject areas

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