High power ion beam generation in the plasma-filled diode

V. M. Bystritskii, A. V. Kharlov, A. V. Mytnikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An experiment on high-power ion beam generation in an inverse type self-insulated diode which used an actively produced source plasma was performed. The experiments were carried out on the accelerator PARUS of 0.2 TW power and 60-ns pulse duration on the matched load. The application of a plasma opening switch (flashboard) upstream from the diode resulted in a factor of 1.8 increase of the diode power in comparison with the matched load operation without plasma opening switch. A comparison of diode characteristics with an active source of anode plasma and the same diode construction with passive anode was made using the results of previous work.

Original languageEnglish
Title of host publication91 IEEE Int Conf Plasma Sci
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages216
Number of pages1
ISBN (Print)0780301471
Publication statusPublished - 1991
Event1991 IEEE International Conference on Plasma Science - Williamsburg, VA, USA
Duration: 3 Jun 19915 Jun 1991

Other

Other1991 IEEE International Conference on Plasma Science
CityWilliamsburg, VA, USA
Period3.6.915.6.91

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bystritskii, V. M., Kharlov, A. V., & Mytnikov, A. V. (1991). High power ion beam generation in the plasma-filled diode. In 91 IEEE Int Conf Plasma Sci (pp. 216). Piscataway, NJ, United States: Publ by IEEE.