Abstract
High-current-density electron beams of nanosecond pulse duration are applied for charge injection into various dielectrics to induce the critical electron emission from dielectric into vacuum. It is shown that critical electron emission induced by high-current-density injection of electrons arises in the form of gigantic single pulse, which is of peak value of 10-1000 A and delayed from injection one for 1-20 ns. Delay time depends on the current density of electron beam being injected. The direct experimental evidence is obtained for intense generation of free electrons and holes in subsurface layer of a dielectric due to Poole-Frenkel effect and impact ionization of traps in high electric field. And this process is considered to be the first main reason for the transition of the ordinary low-current-density electron emission to the high-power critical one. The last is not uniform and always accompanied by point explosions on the dielectric surface and ejections of ion plasmas from these points into vacuum. And these explosions are considered as the second main reason for the transition of the ordinary electron emission to the critical one. So the last is explosion electron emission of dielectrics (EEED). If the electron current to the emitting centers on the dielectric surface is maintained at the needed value then the critical electron emission always causes the vacuum discharge between the dielectric surface and metallic collector. The mechanism of EEED is discussed using the computer simulation of the basic processes.
| Original language | English |
|---|---|
| Title of host publication | Digest of Technical Papers-IEEE International Pulsed Power Conference |
| Editors | G. Cooperstein, I. Vitkovitsky |
| Place of Publication | Piscataway, NJ, United States |
| Publisher | IEEE |
| Pages | 543-548 |
| Number of pages | 6 |
| Volume | 1 |
| ISBN (Print) | 0-7803-4213-5 |
| Publication status | Published - 1997 |
| Event | Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) - Baltimore, MD, USA Duration: 29 Jun 1997 → 2 Jul 1997 |
Other
| Other | Proceedings of the 1997 11th International Pulsed Power Conference. Part 2 (of 2) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 29.6.97 → 2.7.97 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
High-power critical electron emission from dielectric induced by injection of high-current-density electron beam. / Vaisburd, D; Tverdokhlebov, Sergey; Tukhfatullin, Timur Akhatovich.
Digest of Technical Papers-IEEE International Pulsed Power Conference. ed. / G. Cooperstein; I. Vitkovitsky. Vol. 1 Piscataway, NJ, United States : IEEE, 1997. p. 543-548.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High-power critical electron emission from dielectric induced by injection of high-current-density electron beam
AU - Vaisburd, D
AU - Tverdokhlebov, Sergey
AU - Tukhfatullin, Timur Akhatovich
N1 - 11th IEEE International Pulsed Power Conference, BALTIMORE, MD, JUN 29-JUL 02, 1997
PY - 1997
Y1 - 1997
N2 - High-current-density electron beams of nanosecond pulse duration are applied for charge injection into various dielectrics to induce the critical electron emission from dielectric into vacuum. It is shown that critical electron emission induced by high-current-density injection of electrons arises in the form of gigantic single pulse, which is of peak value of 10-1000 A and delayed from injection one for 1-20 ns. Delay time depends on the current density of electron beam being injected. The direct experimental evidence is obtained for intense generation of free electrons and holes in subsurface layer of a dielectric due to Poole-Frenkel effect and impact ionization of traps in high electric field. And this process is considered to be the first main reason for the transition of the ordinary low-current-density electron emission to the high-power critical one. The last is not uniform and always accompanied by point explosions on the dielectric surface and ejections of ion plasmas from these points into vacuum. And these explosions are considered as the second main reason for the transition of the ordinary electron emission to the critical one. So the last is explosion electron emission of dielectrics (EEED). If the electron current to the emitting centers on the dielectric surface is maintained at the needed value then the critical electron emission always causes the vacuum discharge between the dielectric surface and metallic collector. The mechanism of EEED is discussed using the computer simulation of the basic processes.
AB - High-current-density electron beams of nanosecond pulse duration are applied for charge injection into various dielectrics to induce the critical electron emission from dielectric into vacuum. It is shown that critical electron emission induced by high-current-density injection of electrons arises in the form of gigantic single pulse, which is of peak value of 10-1000 A and delayed from injection one for 1-20 ns. Delay time depends on the current density of electron beam being injected. The direct experimental evidence is obtained for intense generation of free electrons and holes in subsurface layer of a dielectric due to Poole-Frenkel effect and impact ionization of traps in high electric field. And this process is considered to be the first main reason for the transition of the ordinary low-current-density electron emission to the high-power critical one. The last is not uniform and always accompanied by point explosions on the dielectric surface and ejections of ion plasmas from these points into vacuum. And these explosions are considered as the second main reason for the transition of the ordinary electron emission to the critical one. So the last is explosion electron emission of dielectrics (EEED). If the electron current to the emitting centers on the dielectric surface is maintained at the needed value then the critical electron emission always causes the vacuum discharge between the dielectric surface and metallic collector. The mechanism of EEED is discussed using the computer simulation of the basic processes.
UR - http://www.scopus.com/inward/record.url?scp=0031366545&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031366545&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0031366545
SN - 0-7803-4213-5
VL - 1
SP - 543
EP - 548
BT - Digest of Technical Papers-IEEE International Pulsed Power Conference
A2 - Cooperstein, G.
A2 - Vitkovitsky, I.
PB - IEEE
CY - Piscataway, NJ, United States
ER -