High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m 2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.

Original languageEnglish
Title of host publicationProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOIs
Publication statusPublished - 2012
Event2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation
Duration: 18 Sep 201221 Sep 2012

Other

Other2012 7th International Forum on Strategic Technology, IFOST 2012
CountryRussian Federation
CityTomsk
Period18.9.1221.9.12

Fingerprint

Conductive materials
Ablation
Ion beams
Vacuum
Plasmas
Coatings
Ion implantation
Vacuum deposition
Pulse repetition rate
Ions
Substrates
Sputtering
Adhesives
Plasma
Plasma treatment
Metals

Keywords

  • ablation plasma
  • coating deposition
  • plasma-immersion ion implantation
  • vacuum-arc plasma

ASJC Scopus subject areas

  • Management of Technology and Innovation

Cite this

High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma. / Ryabchikov, A. I.; Stepanov, I. B.; Sivin, Denis Olegovich; Anan'in, Peter Semenovich; Dektyarev, S. V.

Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012. 6357776.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ryabchikov, AI, Stepanov, IB, Sivin, DO, Anan'in, PS & Dektyarev, SV 2012, High-frequency short-pulse bias potential as a universal method of ion-beam and plasma treatment of conductive and dielectric materials using vacuum-arc and ablation plasma. in Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012., 6357776, 2012 7th International Forum on Strategic Technology, IFOST 2012, Tomsk, Russian Federation, 18.9.12. https://doi.org/10.1109/IFOST.2012.6357776
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AU - Ryabchikov, A. I.

AU - Stepanov, I. B.

AU - Sivin, Denis Olegovich

AU - Anan'in, Peter Semenovich

AU - Dektyarev, S. V.

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AB - The results of investigations of applicability of the method of high-frequency short-pulsed plasma-immersion ion implantation and (or) coating deposition using vacuum-arc and ablation plasma to conductive and dielectric substrates are presented. It is shown that ion implantation with the ion sputtering compensation by coating deposition from plasma and ion-assisted coating deposition can be realized for the metal and dielectric samples through alteration of the negative bias potential within 0-4·103 V, with the pulse repetition rate of (1- 4.4)·105 pps, pulse duration 0.5-2 μs and duty factor of 0.1-0.9. It is experimentally established that at coating deposition from ablation plasma obtained by the influence of the high-intensity ion beam (j = 3·102 A/m 2, E = 350 keV, τ = 90 ns) on the target, the micro-arc effects on the substrate surface are observed at a dc bias potential of more than -60 V. The transition to pulses of 0.5 μs duration enabled to increase the bias potential up to -4 kV. The possibility of application of the high-frequency, short-pulse bias potentials for the formation of coatings from vacuum-arc and ablation plasma with high adhesive strength and improved exploitation characteristics is discussed.

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