This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 1 Jul 2018|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films