Hard TiN₂ dinitride films prepared by magnetron sputtering

Jindřich Musil, Martin Jaroš, Šimon Kos, Radomír Cerstvý, Stanislav Haviar

Research School of High-Energy Physics

Research output: Contribution to journal › Article

Abstract

This letter reports on the formation of hard TiN₂ dinitride films prepared by magnetron sputtering. TiN₂ films were reactively sputtered in an Ar + N₂ gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN₂ films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiN_x films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN₂ dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.

Original language	English
Article number	040602
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	4
DOIs	https://doi.org/10.1116/1.5038555
Publication status	Published - 1 Jul 2018

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ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Musil, J., Jaroš, M., Kos, Š., Cerstvý, R., & Haviar, S. (2018). Hard TiN₂ dinitride films prepared by magnetron sputtering. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 36(4), [040602]. https://doi.org/10.1116/1.5038555

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10.1116/1.5038555