Abstract
This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.
| Original language | English |
|---|---|
| Article number | 040602 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 36 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Jul 2018 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
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Hard TiN2 dinitride films prepared by magnetron sputtering. / Musil, Jindřich; Jaroš, Martin; Kos, Šimon; Cerstvý, Radomír; Haviar, Stanislav.
In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 36, No. 4, 040602, 01.07.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Hard TiN2 dinitride films prepared by magnetron sputtering
AU - Musil, Jindřich
AU - Jaroš, Martin
AU - Kos, Šimon
AU - Cerstvý, Radomír
AU - Haviar, Stanislav
PY - 2018/7/1
Y1 - 2018/7/1
N2 - This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.
AB - This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.
UR - http://www.scopus.com/inward/record.url?scp=85049236961&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85049236961&partnerID=8YFLogxK
U2 - 10.1116/1.5038555
DO - 10.1116/1.5038555
M3 - Article
AN - SCOPUS:85049236961
VL - 36
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 4
M1 - 040602
ER -