Hard TiN2 dinitride films prepared by magnetron sputtering

Jindřich Musil, Martin Jaroš, Šimon Kos, Radomír Cerstvý, Stanislav Haviar

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.

Original languageEnglish
Article number040602
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 1 Jul 2018

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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