Hard TiN<sub>2</sub> dinitride films prepared by magnetron sputtering

Abstract

This letter reports on the formation of hard TiN₂ dinitride films prepared by magnetron sputtering. TiN₂ films were reactively sputtered in an Ar + N₂ gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN₂ films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiN_x films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN₂ dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.

Original language	English
Article number	040602
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	36
Issue number	4
DOIs	https://doi.org/10.1116/1.5038555
Publication status	Published - 1 Jul 2018

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Hard TiN2 dinitride films prepared by magnetron sputtering",

abstract = "This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.",

author = "Jind{\v r}ich Musil and Martin Jaro{\v s} and {\v S}imon Kos and Radom{\'i}r Cerstv{\'y} and Stanislav Haviar",

year = "2018",

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doi = "10.1116/1.5038555",

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T1 - Hard TiN2 dinitride films prepared by magnetron sputtering

AU - Musil, Jindřich

AU - Jaroš, Martin

AU - Kos, Šimon

AU - Cerstvý, Radomír

AU - Haviar, Stanislav

PY - 2018/7/1

Y1 - 2018/7/1

N2 - This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.

AB - This letter reports on the formation of hard TiN2 dinitride films prepared by magnetron sputtering. TiN2 films were reactively sputtered in an Ar + N2 gas mixture using a pulsed dual magnetron with a closed magnetic field B. The principle of the formation of TiN2 films by magnetron sputtering is briefly described. The stoichiometry x = N/Ti of the TiNx films was controlled by deposition parameters, and its maximum value of x = 2.3 was achieved. For the first time, a possibility to form the TiN2 dinitride films by magnetron sputtering has been demonstrated. The mechanical properties of sputtered films were investigated in detail.

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Hard TiN₂ dinitride films prepared by magnetron sputtering

Abstract

ASJC Scopus subject areas

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