Abstract
The high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma (approx.10 20 cm -3, approx.1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target >200 A/cm 2 power density (0.7 - 1.5) 10 8 W/cm 2; pulse duration 60 ns; pulse repetition rate 8 - 10 min -1). The deposition of the films was carried out at room temperature at a high rate of 0.6 - 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 593-598 |
| Number of pages | 6 |
| Volume | 396 |
| Publication status | Published - 1996 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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Growth and structure of thin films by high-intensity pulsed ion-beam deposition. / Ivanov, Yu F.; Matvienko, V. M.; Potyomkin, A. V.; Remnev, G. E.; Zakoutayev, A. N.
Materials Research Society Symposium - Proceedings. Vol. 396 Materials Research Society, 1996. p. 593-598.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Growth and structure of thin films by high-intensity pulsed ion-beam deposition
AU - Ivanov, Yu F.
AU - Matvienko, V. M.
AU - Potyomkin, A. V.
AU - Remnev, G. E.
AU - Zakoutayev, A. N.
PY - 1996
Y1 - 1996
N2 - The high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma (approx.10 20 cm -3, approx.1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target >200 A/cm 2 power density (0.7 - 1.5) 10 8 W/cm 2; pulse duration 60 ns; pulse repetition rate 8 - 10 min -1). The deposition of the films was carried out at room temperature at a high rate of 0.6 - 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.
AB - The high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma (approx.10 20 cm -3, approx.1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target >200 A/cm 2 power density (0.7 - 1.5) 10 8 W/cm 2; pulse duration 60 ns; pulse repetition rate 8 - 10 min -1). The deposition of the films was carried out at room temperature at a high rate of 0.6 - 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.
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UR - http://www.scopus.com/inward/citedby.url?scp=0029698887&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0029698887
VL - 396
SP - 593
EP - 598
BT - Materials Research Society Symposium - Proceedings
PB - Materials Research Society
ER -