Growth and structure of thin films by high-intensity pulsed ion-beam deposition

Yu F. Ivanov, V. M. Matvienko, A. V. Potyomkin, G. E. Remnev, A. N. Zakoutayev

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Abstract

The high-intensity pulsed ion-beam (HIPIB)/solid interaction results in the generation of an ablated plasma (approx.10 20 cm -3, approx.1 eV) which can be used to advantage for the deposition of thin films. Presented are the results of investigation on the deposition by HIPIB of thin films of high-melting metals, i.e. W, Ta, Mo, Nb, as well as of Al and Cu. The kinetics of the layer-by-layer film growth has been studied using transmission electron microscopy (TEM), transmission electron diffraction (TED) and reflection ellipsometry. The experiments were performed on a TEMP-2 supercurrent accelerator (ion energy 500 keV; ion current density at the target >200 A/cm 2 power density (0.7 - 1.5) 10 8 W/cm 2; pulse duration 60 ns; pulse repetition rate 8 - 10 min -1). The deposition of the films was carried out at room temperature at a high rate of 0.6 - 4.0 mm/s using (100)Si, (001)NaCl, glass and glass ceramic substrates.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages593-598
Number of pages6
Volume396
Publication statusPublished - 1996

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ivanov, Y. F., Matvienko, V. M., Potyomkin, A. V., Remnev, G. E., & Zakoutayev, A. N. (1996). Growth and structure of thin films by high-intensity pulsed ion-beam deposition. In Materials Research Society Symposium - Proceedings (Vol. 396, pp. 593-598). Materials Research Society.