Growth and characterization of site-selective quantum dots

Mathieu Helfrich, Philipp Schroth, Daniil Grigoriev, Sergey Lazarev, Roberto Felici, Taras Slobodskyy, Tilo Baumbach, Daniel M. Schaadt

Research output: Contribution to journalReview article

8 Citations (Scopus)

Abstract

A review on the growth and characterization of site-selective quantum dots (QDs) is presented. First, a theoretical model is used to describe the mechanism leading to the formation of QDs at pre-defined locations. The structural properties of site-selective QDs was revealed and their optical quality was tested. Various parameters, such as hole size, hole depth, or InAs amount, influencing the QD occupation and the QD size are discussed and possible ways to control these are presented. Ordered QD array with multiple dot nucleation (left) and single QD in dry etched hole (right).

Original languageEnglish
Pages (from-to)2387-2401
Number of pages15
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume209
Issue number12
DOIs
Publication statusPublished - Dec 2012
Externally publishedYes

Keywords

  • in situ annealing
  • molecular beam epitaxy
  • quantum dots
  • site-selective growth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

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  • Cite this

    Helfrich, M., Schroth, P., Grigoriev, D., Lazarev, S., Felici, R., Slobodskyy, T., Baumbach, T., & Schaadt, D. M. (2012). Growth and characterization of site-selective quantum dots. Physica Status Solidi (A) Applications and Materials Science, 209(12), 2387-2401. https://doi.org/10.1002/pssa.201228423