Abstract
Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range ΔT = (20 ÷ 360) °C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range ΔT = (20 ÷ 180) °C. Subgrain growth with maximum =60 nm at 120 °C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T > 180 °C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature ΔT = (20 ÷ 180) °C positrons are trapped at low-angle boundaries enriched by impurities. Within the range ΔT = (180 ÷ 360) °C the dominant trap is dislocations.
| Original language | English |
|---|---|
| Pages (from-to) | 714-717 |
| Number of pages | 4 |
| Journal | Acta Physica Polonica A |
| Volume | 128 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1 Oct 2015 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Grain-subgrain structure and vacancy-type defects in submicrocrystalline nickel at low temperature annealing. / Kuznetsov, P. V.; Lider, A. M.; Bordulev, Yu S.; Laptev, R. S.; Rakhmatulina, T. V.; Korznikov, A. V.
In: Acta Physica Polonica A, Vol. 128, No. 4, 01.10.2015, p. 714-717.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Grain-subgrain structure and vacancy-type defects in submicrocrystalline nickel at low temperature annealing
AU - Kuznetsov, P. V.
AU - Lider, A. M.
AU - Bordulev, Yu S.
AU - Laptev, R. S.
AU - Rakhmatulina, T. V.
AU - Korznikov, A. V.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range ΔT = (20 ÷ 360) °C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range ΔT = (20 ÷ 180) °C. Subgrain growth with maximum =60 nm at 120 °C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T > 180 °C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature ΔT = (20 ÷ 180) °C positrons are trapped at low-angle boundaries enriched by impurities. Within the range ΔT = (180 ÷ 360) °C the dominant trap is dislocations.
AB - Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range ΔT = (20 ÷ 360) °C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range ΔT = (20 ÷ 180) °C. Subgrain growth with maximum =60 nm at 120 °C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T > 180 °C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature ΔT = (20 ÷ 180) °C positrons are trapped at low-angle boundaries enriched by impurities. Within the range ΔT = (180 ÷ 360) °C the dominant trap is dislocations.
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UR - http://www.scopus.com/inward/citedby.url?scp=84950300395&partnerID=8YFLogxK
U2 - 10.12693/APhysPolA.128.714
DO - 10.12693/APhysPolA.128.714
M3 - Article
AN - SCOPUS:84950300395
VL - 128
SP - 714
EP - 717
JO - Acta Physica Polonica B
JF - Acta Physica Polonica B
SN - 0587-4246
IS - 4
ER -