Abstract
The paper uses methods of the modern material physics to study the phase composition change and restructuring in the silumin surface layer due to high-current pulsed electron beam treatment. It has been found that irradiation of silumin with the high-current pulsed electron beam (25 J/cm2, 150 μs, 3 pulses) leads to high-rate melting of the surface layer and subsequent high-rate crystallization characterized with the formation of a submicroscopic nanocrystalline multiphase structure. The formed structure proved to be gradient and multilayer. It was predominately represented by submicron cells resulting from high-rate crystallization of the aluminum-based solid solution. Nanosized layers of the second phase and submicron cells of eutectic crystallization of silumin have been revealed along the cell boundaries. Silicon and intermetallic inclusions have been found to dissolve in the layer of thickness up to 40 μm. The 1.5-2.0-fold decrease in the concentration of alloying elements has been discovered in the surface layer of irradiated silumin specimens. The X-ray microanalysis revealed that the irradiation of silumin with the high-current pulsed electron beam reduces by more than half the silicon concentration in the surface layer ≈60 μm thick and transforms it into the quasi-homogeneous state.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures |
| Editors | Vasily M. Fomin, Victor E. Panin, Sergey G. Psakhie |
| Publisher | American Institute of Physics Inc. |
| Volume | 2051 |
| ISBN (Electronic) | 9780735417779 |
| DOIs | |
| Publication status | Published - 12 Dec 2018 |
| Event | International Symposium on Hierarchical Materials: Development and Applications for New Technologies and Reliable Structures 2018 - Tomsk, Russian Federation Duration: 1 Oct 2018 → 5 Oct 2018 |
Conference
| Conference | International Symposium on Hierarchical Materials: Development and Applications for New Technologies and Reliable Structures 2018 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 1.10.18 → 5.10.18 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Gradient structure formation in the surface layer of AK10M2N silumin by electron beam treatment. / Zagulyaev, D. V.; Gromov, V. E.; Konovalov, S. V.; Ivanov, Yu F.; Teresov, A. D.; Serenkov, Yu S.
Proceedings of the Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures. ed. / Vasily M. Fomin; Victor E. Panin; Sergey G. Psakhie. Vol. 2051 American Institute of Physics Inc., 2018. 020333.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Gradient structure formation in the surface layer of AK10M2N silumin by electron beam treatment
AU - Zagulyaev, D. V.
AU - Gromov, V. E.
AU - Konovalov, S. V.
AU - Ivanov, Yu F.
AU - Teresov, A. D.
AU - Serenkov, Yu S.
PY - 2018/12/12
Y1 - 2018/12/12
N2 - The paper uses methods of the modern material physics to study the phase composition change and restructuring in the silumin surface layer due to high-current pulsed electron beam treatment. It has been found that irradiation of silumin with the high-current pulsed electron beam (25 J/cm2, 150 μs, 3 pulses) leads to high-rate melting of the surface layer and subsequent high-rate crystallization characterized with the formation of a submicroscopic nanocrystalline multiphase structure. The formed structure proved to be gradient and multilayer. It was predominately represented by submicron cells resulting from high-rate crystallization of the aluminum-based solid solution. Nanosized layers of the second phase and submicron cells of eutectic crystallization of silumin have been revealed along the cell boundaries. Silicon and intermetallic inclusions have been found to dissolve in the layer of thickness up to 40 μm. The 1.5-2.0-fold decrease in the concentration of alloying elements has been discovered in the surface layer of irradiated silumin specimens. The X-ray microanalysis revealed that the irradiation of silumin with the high-current pulsed electron beam reduces by more than half the silicon concentration in the surface layer ≈60 μm thick and transforms it into the quasi-homogeneous state.
AB - The paper uses methods of the modern material physics to study the phase composition change and restructuring in the silumin surface layer due to high-current pulsed electron beam treatment. It has been found that irradiation of silumin with the high-current pulsed electron beam (25 J/cm2, 150 μs, 3 pulses) leads to high-rate melting of the surface layer and subsequent high-rate crystallization characterized with the formation of a submicroscopic nanocrystalline multiphase structure. The formed structure proved to be gradient and multilayer. It was predominately represented by submicron cells resulting from high-rate crystallization of the aluminum-based solid solution. Nanosized layers of the second phase and submicron cells of eutectic crystallization of silumin have been revealed along the cell boundaries. Silicon and intermetallic inclusions have been found to dissolve in the layer of thickness up to 40 μm. The 1.5-2.0-fold decrease in the concentration of alloying elements has been discovered in the surface layer of irradiated silumin specimens. The X-ray microanalysis revealed that the irradiation of silumin with the high-current pulsed electron beam reduces by more than half the silicon concentration in the surface layer ≈60 μm thick and transforms it into the quasi-homogeneous state.
UR - http://www.scopus.com/inward/record.url?scp=85059015899&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059015899&partnerID=8YFLogxK
U2 - 10.1063/1.5083576
DO - 10.1063/1.5083576
M3 - Conference contribution
VL - 2051
BT - Proceedings of the Advanced Materials with Hierarchical Structure for New Technologies and Reliable Structures
A2 - Fomin, Vasily M.
A2 - Panin, Victor E.
A2 - Psakhie, Sergey G.
PB - American Institute of Physics Inc.
ER -