Generation of boron ion beams by vacuum arc and planar magnetron ion sources

Alexey Bugaev, Valeria Frolova, Vasily Gushenets, Alexey Nikolaev, Efim Oks, Konstantin Savkin, Maxim Shandrikov, Alexey Vizir, Anatoly Yushkov, Boris Kadlubovich, Georgy Yushkov

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Abstract

Boron ions can be implanted not only in semiconductors such as silicon wafers but also in other materials and metal products, e.g., machine parts and tools, to increase their surface properties and therefore lifetime. The purity of boron ion beams for these purposes is not so critical as for semiconductor technologies. Here, we present experimental results on the generation of pulsed boron ion beams in vacuum arc and planar magnetron ion sources with pure boron and lanthanum hexaboride cathodes with emphasis on the mass-charge state composition of the ion beams.

Original languageEnglish
Article number103302
JournalReview of Scientific Instruments
Volume90
Issue number10
DOIs
Publication statusPublished - 1 Oct 2019

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ASJC Scopus subject areas

  • Instrumentation

Cite this

Bugaev, A., Frolova, V., Gushenets, V., Nikolaev, A., Oks, E., Savkin, K., ... Yushkov, G. (2019). Generation of boron ion beams by vacuum arc and planar magnetron ion sources. Review of Scientific Instruments, 90(10), [103302]. https://doi.org/10.1063/1.5125704