Generation and application of focused high power ion beam in the B r-applied diode

V. M. Bystritskii, S. N. Volkov, I. V. Lisitsyn, A. V. Mytnikov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm 2. The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ.

Original languageEnglish
Title of host publicationIEEE International Conference on Plasma Science
PublisherIEEE
Pages152
Number of pages1
Publication statusPublished - 1994
EventProceedings of the IEEE International Conference on Plasma Science - Santa Fe, NM, USA
Duration: 6 Jun 19948 Jun 1994

Other

OtherProceedings of the IEEE International Conference on Plasma Science
CitySanta Fe, NM, USA
Period6.6.948.6.94

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Bystritskii, V. M., Volkov, S. N., Lisitsyn, I. V., & Mytnikov, A. V. (1994). Generation and application of focused high power ion beam in the B r-applied diode In IEEE International Conference on Plasma Science (pp. 152). IEEE.