Generation and application of focused high power ion beam in the B <sub>r</sub>-applied diode

Abstract

The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm ². The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ.

Original language	English
Title of host publication	IEEE International Conference on Plasma Science
Publisher	IEEE
Pages	152
Number of pages	1
Publication status	Published - 1994
Event	Proceedings of the IEEE International Conference on Plasma Science - Santa Fe, NM, USA Duration: 6 Jun 1994 → 8 Jun 1994

Other

Other	Proceedings of the IEEE International Conference on Plasma Science
City	Santa Fe, NM, USA
Period	6.6.94 → 8.6.94

ASJC Scopus subject areas

Condensed Matter Physics

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@inproceedings{62b1f1e9a5b749dba08b42303a063270,

title = "Generation and application of focused high power ion beam in the B r-applied diode ",

abstract = "The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm 2. The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ. ",

author = "Bystritskii, {V. M.} and Volkov, {S. N.} and Lisitsyn, {I. V.} and Mytnikov, {A. V.}",

year = "1994",

language = "English",

pages = "152",

booktitle = "IEEE International Conference on Plasma Science",

publisher = "IEEE",

note = "Proceedings of the IEEE International Conference on Plasma Science ; Conference date: 06-06-1994 Through 08-06-1994",

}

TY - GEN

T1 - Generation and application of focused high power ion beam in the B r-applied diode

AU - Bystritskii, V. M.

AU - Volkov, S. N.

AU - Lisitsyn, I. V.

AU - Mytnikov, A. V.

PY - 1994

Y1 - 1994

N2 - The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm 2. The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ.

AB - The experiments were carried out on the high-current accelerator GIMN with 700 kV of positive pulsed voltage, wave impedance of 5 ohm and a pulse duration of 80 ns. The anode of the MID was machined from the copper block and had the shape of spherical annulus with the curvature radius of 130 mm, inner and outer annular diameters of 130 and 182 mm, respectively, and total area of 160 cm 2. The high power ion beam was obtained in B-applied extractor type diode on GIMN accelerator. The maximum achieved beam parameters are: total ion current - 50 kA; ion beam energy - 2.5 kJ.

UR - http://www.scopus.com/inward/record.url?scp=0028741698&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028741698&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0028741698

SP - 152

BT - IEEE International Conference on Plasma Science

PB - IEEE

T2 - Proceedings of the IEEE International Conference on Plasma Science

Y2 - 6 June 1994 through 8 June 1994

ER -

Generation and application of focused high power ion beam in the B _r-applied diode

Abstract

Other

ASJC Scopus subject areas

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