Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management

Frederic Richardeau, Francois Boige, Stephane Lefebvre

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The silicon carbide MOSFETs tend to become the standard for high-performance medium voltage power electronics in terms of compactness and efficiency. Although the weakness of its gate-oxide and the relatively low short-circuit time capability are known limitations, this device reveals interesting unique properties. In this paper the authors explore the gate leakage-current behavior in normal and pre-damage operations as well as the conditions for obtaining an atypical and very interesting fail-to-open mode which has never been observed with silicon dies. These properties may be used for dedicated and innovative protection techniques for safer converter.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538641927
DOIs
Publication statusPublished - 9 Jan 2019
Externally publishedYes
Event2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018 - Nottingham, United Kingdom
Duration: 7 Nov 20189 Nov 2018

Publication series

Name2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018

Conference

Conference2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018
CountryUnited Kingdom
CityNottingham
Period7.11.189.11.18

Keywords

  • fail-safe operation
  • fault-management
  • Mosfet
  • reliability
  • short-circuit
  • SiC

ASJC Scopus subject areas

  • Aerospace Engineering
  • Electrical and Electronic Engineering
  • Transportation
  • Energy Engineering and Power Technology
  • Automotive Engineering
  • Control and Optimization

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  • Cite this

    Richardeau, F., Boige, F., & Lefebvre, S. (2019). Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet: Overview and analysis of unique properties for converter protection and possible future safety management. In 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018 [8607551] (2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles and International Transportation Electrification Conference, ESARS-ITEC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESARS-ITEC.2018.8607551