GaSe damage threshold under IR pulse pumping

Jin Guo, Ji Jiang Xie, Laiming Zhang, Fei Chen, Ke Jiang, Sergei V. Alexeev, Yury M. Andreev, Konstantin A. Kokh, Gregory V. Lanskii, Valery F. Losev, Dmitry M. Lubenko, Anna V. Shaiduko, Valeriy A. Svetlichnyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

Original languageEnglish
Title of host publicationXIX International Symposium on High-Power Laser Systems and Applications 2012
Volume8677
DOIs
Publication statusPublished - 2013
EventXIX International Symposium on High-Power Laser Systems and Applications 2012 - Istanbul, Turkey
Duration: 10 Sep 201214 Sep 2012

Conference

ConferenceXIX International Symposium on High-Power Laser Systems and Applications 2012
CountryTurkey
CityIstanbul
Period10.9.1214.9.12

Keywords

  • crystal bulk
  • damage threshold
  • multiphoton absorptions
  • non-linear GaSe crystals
  • Ti:Sapphiere and CO lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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