Abstract
Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.
| Original language | English |
|---|---|
| Title of host publication | XIX International Symposium on High-Power Laser Systems and Applications 2012 |
| Volume | 8677 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | XIX International Symposium on High-Power Laser Systems and Applications 2012 - Istanbul, Turkey Duration: 10 Sep 2012 → 14 Sep 2012 |
Conference
| Conference | XIX International Symposium on High-Power Laser Systems and Applications 2012 |
|---|---|
| Country | Turkey |
| City | Istanbul |
| Period | 10.9.12 → 14.9.12 |
Fingerprint
Keywords
- crystal bulk
- damage threshold
- multiphoton absorptions
- non-linear GaSe crystals
- Ti:Sapphiere and CO lasers
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
GaSe damage threshold under IR pulse pumping. / Guo, Jin; Xie, Ji Jiang; Zhang, Laiming; Chen, Fei; Jiang, Ke; Alexeev, Sergei V.; Andreev, Yury M.; Kokh, Konstantin A.; Lanskii, Gregory V.; Losev, Valery F.; Lubenko, Dmitry M.; Shaiduko, Anna V.; Svetlichnyi, Valeriy A.
XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677 2013. 86771E.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - GaSe damage threshold under IR pulse pumping
AU - Guo, Jin
AU - Xie, Ji Jiang
AU - Zhang, Laiming
AU - Chen, Fei
AU - Jiang, Ke
AU - Alexeev, Sergei V.
AU - Andreev, Yury M.
AU - Kokh, Konstantin A.
AU - Lanskii, Gregory V.
AU - Losev, Valery F.
AU - Lubenko, Dmitry M.
AU - Shaiduko, Anna V.
AU - Svetlichnyi, Valeriy A.
PY - 2013
Y1 - 2013
N2 - Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.
AB - Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.
KW - crystal bulk
KW - damage threshold
KW - multiphoton absorptions
KW - non-linear GaSe crystals
KW - Ti:Sapphiere and CO lasers
UR - http://www.scopus.com/inward/record.url?scp=84875882824&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875882824&partnerID=8YFLogxK
U2 - 10.1117/12.2008916
DO - 10.1117/12.2008916
M3 - Conference contribution
AN - SCOPUS:84875882824
SN - 9780819494559
VL - 8677
BT - XIX International Symposium on High-Power Laser Systems and Applications 2012
ER -