GaSe damage threshold under IR pulse pumping

Jin Guo, Ji Jiang Xie, Laiming Zhang, Fei Chen, Ke Jiang, Sergei V. Alexeev, Yury M. Andreev, Konstantin A. Kokh, Gregory V. Lanskii, Valery F. Losev, Dmitry M. Lubenko, Anna V. Shaiduko, Valeriy A. Svetlichnyi

Division for Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO ₂ laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

Original language	English
Title of host publication	XIX International Symposium on High-Power Laser Systems and Applications 2012
Volume	8677
DOIs	https://doi.org/10.1117/12.2008916
Publication status	Published - 2013
Event	XIX International Symposium on High-Power Laser Systems and Applications 2012 - Istanbul, Turkey Duration: 10 Sep 2012 → 14 Sep 2012

Conference

Conference	XIX International Symposium on High-Power Laser Systems and Applications 2012
Country	Turkey
City	Istanbul
Period	10.9.12 → 14.9.12

Fingerprint

Keywords

crystal bulk
damage threshold
multiphoton absorptions
non-linear GaSe crystals
Ti:Sapphiere and CO lasers

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Guo, J., Xie, J. J., Zhang, L., Chen, F., Jiang, K., Alexeev, S. V., ... Svetlichnyi, V. A. (2013). GaSe damage threshold under IR pulse pumping. In XIX International Symposium on High-Power Laser Systems and Applications 2012 (Vol. 8677). [86771E] https://doi.org/10.1117/12.2008916

GaSe damage threshold under IR pulse pumping. / Guo, Jin; Xie, Ji Jiang; Zhang, Laiming; Chen, Fei; Jiang, Ke; Alexeev, Sergei V.; Andreev, Yury M.; Kokh, Konstantin A.; Lanskii, Gregory V.; Losev, Valery F.; Lubenko, Dmitry M.; Shaiduko, Anna V.; Svetlichnyi, Valeriy A.

XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677 2013. 86771E.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Guo, J, Xie, JJ, Zhang, L, Chen, F, Jiang, K, Alexeev, SV, Andreev, YM, Kokh, KA, Lanskii, GV, Losev, VF, Lubenko, DM, Shaiduko, AV & Svetlichnyi, VA 2013, GaSe damage threshold under IR pulse pumping. in XIX International Symposium on High-Power Laser Systems and Applications 2012. vol. 8677, 86771E, XIX International Symposium on High-Power Laser Systems and Applications 2012, Istanbul, Turkey, 10.9.12. https://doi.org/10.1117/12.2008916

Guo, Jin ; Xie, Ji Jiang ; Zhang, Laiming ; Chen, Fei ; Jiang, Ke ; Alexeev, Sergei V. ; Andreev, Yury M. ; Kokh, Konstantin A. ; Lanskii, Gregory V. ; Losev, Valery F. ; Lubenko, Dmitry M. ; Shaiduko, Anna V. ; Svetlichnyi, Valeriy A. / GaSe damage threshold under IR pulse pumping. XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677 2013.

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abstract = "Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.",

keywords = "crystal bulk, damage threshold, multiphoton absorptions, non-linear GaSe crystals, Ti:Sapphiere and CO lasers",

author = "Jin Guo and Xie, {Ji Jiang} and Laiming Zhang and Fei Chen and Ke Jiang and Alexeev, {Sergei V.} and Andreev, {Yury M.} and Kokh, {Konstantin A.} and Lanskii, {Gregory V.} and Losev, {Valery F.} and Lubenko, {Dmitry M.} and Shaiduko, {Anna V.} and Svetlichnyi, {Valeriy A.}",

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AU - Zhang, Laiming

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AU - Andreev, Yury M.

AU - Kokh, Konstantin A.

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AB - Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

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Access to Document

10.1117/12.2008916