GaSe damage threshold under IR pulse pumping

Jin Guo, Ji Jiang Xie, Laiming Zhang, Fei Chen, Ke Jiang, Sergei V. Alexeev, Yury M. Andreev, Konstantin A. Kokh, Gregory V. Lanskii, Valery F. Losev, Dmitry M. Lubenko, Anna V. Shaiduko, Valeriy A. Svetlichnyi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

Original languageEnglish
Title of host publicationXIX International Symposium on High-Power Laser Systems and Applications 2012
Volume8677
DOIs
Publication statusPublished - 2013
EventXIX International Symposium on High-Power Laser Systems and Applications 2012 - Istanbul, Turkey
Duration: 10 Sep 201214 Sep 2012

Conference

ConferenceXIX International Symposium on High-Power Laser Systems and Applications 2012
CountryTurkey
CityIstanbul
Period10.9.1214.9.12

Fingerprint

yield point
pumping
Damage
Pumping (laser)
Defects
Carbon Monoxide
pulses
Thermal effects
Transparency
Laser
Laser pulses
multiphoton absorption
Thermal Effects
defects
Crystals
lasers
temperature effects
Lasers
Crystal
Absorption

Keywords

  • crystal bulk
  • damage threshold
  • multiphoton absorptions
  • non-linear GaSe crystals
  • Ti:Sapphiere and CO lasers

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Guo, J., Xie, J. J., Zhang, L., Chen, F., Jiang, K., Alexeev, S. V., ... Svetlichnyi, V. A. (2013). GaSe damage threshold under IR pulse pumping. In XIX International Symposium on High-Power Laser Systems and Applications 2012 (Vol. 8677). [86771E] https://doi.org/10.1117/12.2008916

GaSe damage threshold under IR pulse pumping. / Guo, Jin; Xie, Ji Jiang; Zhang, Laiming; Chen, Fei; Jiang, Ke; Alexeev, Sergei V.; Andreev, Yury M.; Kokh, Konstantin A.; Lanskii, Gregory V.; Losev, Valery F.; Lubenko, Dmitry M.; Shaiduko, Anna V.; Svetlichnyi, Valeriy A.

XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677 2013. 86771E.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Guo, J, Xie, JJ, Zhang, L, Chen, F, Jiang, K, Alexeev, SV, Andreev, YM, Kokh, KA, Lanskii, GV, Losev, VF, Lubenko, DM, Shaiduko, AV & Svetlichnyi, VA 2013, GaSe damage threshold under IR pulse pumping. in XIX International Symposium on High-Power Laser Systems and Applications 2012. vol. 8677, 86771E, XIX International Symposium on High-Power Laser Systems and Applications 2012, Istanbul, Turkey, 10.9.12. https://doi.org/10.1117/12.2008916
Guo J, Xie JJ, Zhang L, Chen F, Jiang K, Alexeev SV et al. GaSe damage threshold under IR pulse pumping. In XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677. 2013. 86771E https://doi.org/10.1117/12.2008916
Guo, Jin ; Xie, Ji Jiang ; Zhang, Laiming ; Chen, Fei ; Jiang, Ke ; Alexeev, Sergei V. ; Andreev, Yury M. ; Kokh, Konstantin A. ; Lanskii, Gregory V. ; Losev, Valery F. ; Lubenko, Dmitry M. ; Shaiduko, Anna V. ; Svetlichnyi, Valeriy A. / GaSe damage threshold under IR pulse pumping. XIX International Symposium on High-Power Laser Systems and Applications 2012. Vol. 8677 2013.
@inproceedings{3f197532da8241b5a5c9576b159aab0f,
title = "GaSe damage threshold under IR pulse pumping",
abstract = "Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.",
keywords = "crystal bulk, damage threshold, multiphoton absorptions, non-linear GaSe crystals, Ti:Sapphiere and CO lasers",
author = "Jin Guo and Xie, {Ji Jiang} and Laiming Zhang and Fei Chen and Ke Jiang and Alexeev, {Sergei V.} and Andreev, {Yury M.} and Kokh, {Konstantin A.} and Lanskii, {Gregory V.} and Losev, {Valery F.} and Lubenko, {Dmitry M.} and Shaiduko, {Anna V.} and Svetlichnyi, {Valeriy A.}",
year = "2013",
doi = "10.1117/12.2008916",
language = "English",
isbn = "9780819494559",
volume = "8677",
booktitle = "XIX International Symposium on High-Power Laser Systems and Applications 2012",

}

TY - GEN

T1 - GaSe damage threshold under IR pulse pumping

AU - Guo, Jin

AU - Xie, Ji Jiang

AU - Zhang, Laiming

AU - Chen, Fei

AU - Jiang, Ke

AU - Alexeev, Sergei V.

AU - Andreev, Yury M.

AU - Kokh, Konstantin A.

AU - Lanskii, Gregory V.

AU - Losev, Valery F.

AU - Lubenko, Dmitry M.

AU - Shaiduko, Anna V.

AU - Svetlichnyi, Valeriy A.

PY - 2013

Y1 - 2013

N2 - Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

AB - Damage threshold of non-linear GaSe crystals under IR fs (Ti:Sapphiere 800 nm laser and 1.1-2.9μm OPG) and ns (2. 79 Er 3+:YSGG and 10.6μm CO 2 laser) pulse pumping is studded in details. Local micro defects and field induced effects (GaSe dissociation, multiphoton absorptions and transient transparency origin effects) are identified as responsible for damage threshold in this case. Local (including nano scaled) defects and thermal effects are identified as reason of damage threshold under ns pulse pumping.

KW - crystal bulk

KW - damage threshold

KW - multiphoton absorptions

KW - non-linear GaSe crystals

KW - Ti:Sapphiere and CO lasers

UR - http://www.scopus.com/inward/record.url?scp=84875882824&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875882824&partnerID=8YFLogxK

U2 - 10.1117/12.2008916

DO - 10.1117/12.2008916

M3 - Conference contribution

AN - SCOPUS:84875882824

SN - 9780819494559

VL - 8677

BT - XIX International Symposium on High-Power Laser Systems and Applications 2012

ER -