Abstract
Ion-heat modification allow to adjust the surface conductivity of inorganic dielectrics from σ=10-15 S to 10-4 S. The surface electrophysical and optical properties are stable after annealing in vacuum and in rare gases but they change in oxygen-contained mediums owing to interaction between defects and atmospheric oxygen. Energetic and kinetic characteristics of conduction, photoconduction, transport charge mechanisms and its stability after irradiation of the polycrystallme aluminium oxide with titanium ions (Φ=1017 cm-2, EI=100 keV) and subsequent annealing in vacuum and in air (P=1-105 Pa, Tan=300-2000 K) were investigated. Induced defects and implanted ions accumulation and its integration into clusters and impurity-defects complexes, defects type transformation within complexes, defects charge exchange in clusters are determine the dependencies σ(Φ,Tan,T,t) in irradiated Al2O3 after annealing in vacuum. Oxygen-contained complexes with different electronic level spectra and stability, substitutional defect clusters and stoichiometric composition of compounds produced by ion-beat modification are determine the properties stability at the heating in air.
Original language | English |
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Title of host publication | Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
Pages | 176-180 |
Number of pages | 5 |
Volume | 1 |
DOIs | |
Publication status | Published - 2005 |
Event | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 - Novosibirsk, Russian Federation Duration: 26 Jun 2005 → 2 Jul 2005 |
Other
Other | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
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Country | Russian Federation |
City | Novosibirsk |
Period | 26.6.05 → 2.7.05 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Gas medium effect on electrophysical properties of alumina irradiated with titanium ions. / Kabyshev, A. V.; Konusov, F. V.; Krivosheeva, N. V.
Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005. Vol. 1 2005. p. 176-180 1507677.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Gas medium effect on electrophysical properties of alumina irradiated with titanium ions
AU - Kabyshev, A. V.
AU - Konusov, F. V.
AU - Krivosheeva, N. V.
PY - 2005
Y1 - 2005
N2 - Ion-heat modification allow to adjust the surface conductivity of inorganic dielectrics from σ=10-15 S to 10-4 S. The surface electrophysical and optical properties are stable after annealing in vacuum and in rare gases but they change in oxygen-contained mediums owing to interaction between defects and atmospheric oxygen. Energetic and kinetic characteristics of conduction, photoconduction, transport charge mechanisms and its stability after irradiation of the polycrystallme aluminium oxide with titanium ions (Φ=1017 cm-2, EI=100 keV) and subsequent annealing in vacuum and in air (P=1-105 Pa, Tan=300-2000 K) were investigated. Induced defects and implanted ions accumulation and its integration into clusters and impurity-defects complexes, defects type transformation within complexes, defects charge exchange in clusters are determine the dependencies σ(Φ,Tan,T,t) in irradiated Al2O3 after annealing in vacuum. Oxygen-contained complexes with different electronic level spectra and stability, substitutional defect clusters and stoichiometric composition of compounds produced by ion-beat modification are determine the properties stability at the heating in air.
AB - Ion-heat modification allow to adjust the surface conductivity of inorganic dielectrics from σ=10-15 S to 10-4 S. The surface electrophysical and optical properties are stable after annealing in vacuum and in rare gases but they change in oxygen-contained mediums owing to interaction between defects and atmospheric oxygen. Energetic and kinetic characteristics of conduction, photoconduction, transport charge mechanisms and its stability after irradiation of the polycrystallme aluminium oxide with titanium ions (Φ=1017 cm-2, EI=100 keV) and subsequent annealing in vacuum and in air (P=1-105 Pa, Tan=300-2000 K) were investigated. Induced defects and implanted ions accumulation and its integration into clusters and impurity-defects complexes, defects type transformation within complexes, defects charge exchange in clusters are determine the dependencies σ(Φ,Tan,T,t) in irradiated Al2O3 after annealing in vacuum. Oxygen-contained complexes with different electronic level spectra and stability, substitutional defect clusters and stoichiometric composition of compounds produced by ion-beat modification are determine the properties stability at the heating in air.
UR - http://www.scopus.com/inward/record.url?scp=33746145267&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746145267&partnerID=8YFLogxK
U2 - 10.1109/KORUS.2005.1507677
DO - 10.1109/KORUS.2005.1507677
M3 - Conference contribution
AN - SCOPUS:33746145267
SN - 0780389433
SN - 9780780389434
VL - 1
SP - 176
EP - 180
BT - Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
ER -