Gamma degradation of light-emitting diodes based on heterostructures AlGaInP

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Gamma degradation was investigated for AlGaInP light-emitting diodes with wavelengths in the 590 nm region. The process of degradation light output power is shown in two stages. Light-current and current-voltage characteristic of the light-emitting diodes fabricated on the basis of heterostructures with AlGaInP multiple quantum wells has possible to distinguished areas of weak and strong injection of electrons into the active region of the diodes by measuring light output. The value of the light output power of LEDs irradiated 60Co gamma-rays in a passive mode decreases with increasing radiation dose, while power of degradation of light output is directly proportional to dose and fluency and is inversely proportional to the operating current at which it measured. With reduction of radiation dose differences between the region of strong injection and weak injection increases. Comparison of the research results made of different semiconductor structures suggests that the stages of degradation processes is common to all light-emitting diodes under irradiation by fast neutrons, protons, electrons and gamma rays.

Original languageEnglish
Title of host publicationProceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012
DOIs
Publication statusPublished - 2012
Event2012 7th International Forum on Strategic Technology, IFOST 2012 - Tomsk, Russian Federation
Duration: 18 Sep 201221 Sep 2012

Other

Other2012 7th International Forum on Strategic Technology, IFOST 2012
CountryRussian Federation
CityTomsk
Period18.9.1221.9.12

Fingerprint

Light emitting diodes
Heterojunctions
Degradation
Dosimetry
Gamma rays
Electrons
Current voltage characteristics
Semiconductor quantum wells
Neutrons
Protons
Diodes
Irradiation
Semiconductor materials
Wavelength
Injection
Radiation

Keywords

  • AlGaInP heterostructures
  • light-emitting diodes with quantum wells
  • radiation sensitivity

ASJC Scopus subject areas

  • Management of Technology and Innovation

Cite this

Orlova, K. N., Gradoboev, A. V., & Asanov, I. A. (2012). Gamma degradation of light-emitting diodes based on heterostructures AlGaInP. In Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012 [6357528] https://doi.org/10.1109/IFOST.2012.6357528

Gamma degradation of light-emitting diodes based on heterostructures AlGaInP. / Orlova, K. N.; Gradoboev, A. V.; Asanov, I. A.

Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012. 6357528.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Orlova, KN, Gradoboev, AV & Asanov, IA 2012, Gamma degradation of light-emitting diodes based on heterostructures AlGaInP. in Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012., 6357528, 2012 7th International Forum on Strategic Technology, IFOST 2012, Tomsk, Russian Federation, 18.9.12. https://doi.org/10.1109/IFOST.2012.6357528
Orlova KN, Gradoboev AV, Asanov IA. Gamma degradation of light-emitting diodes based on heterostructures AlGaInP. In Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012. 6357528 https://doi.org/10.1109/IFOST.2012.6357528
Orlova, K. N. ; Gradoboev, A. V. ; Asanov, I. A. / Gamma degradation of light-emitting diodes based on heterostructures AlGaInP. Proceedings - 2012 7th International Forum on Strategic Technology, IFOST 2012. 2012.
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