Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system

A. N. Zakharov, K. V. Oskomov, S. V. Rabotkin, A. A. Solov'ev, N. S. Sochugov

The Weinberg Research Center

Research output: Contribution to journal › Article

Abstract

Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.

Original language	English
Pages (from-to)	719-723
Number of pages	5
Journal	Technical Physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.1134/S1063784210050191
Publication status	Published - 1 May 2010

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Zakharov, A. N., Oskomov, K. V., Rabotkin, S. V., Solov'ev, A. A., & Sochugov, N. S. (2010). Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system. Technical Physics, 55(5), 719-723. https://doi.org/10.1134/S1063784210050191

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Access to Document

10.1134/S1063784210050191