Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system

A. N. Zakharov, K. V. Oskomov, S. V. Rabotkin, A. A. Solov'ev, N. S. Sochugov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.

Original languageEnglish
Pages (from-to)719-723
Number of pages5
JournalTechnical Physics
Volume55
Issue number5
DOIs
Publication statusPublished - 1 May 2010

Fingerprint

zinc oxides
gallium
oxide films
magnetron sputtering
sputtering
argon
atomic force microscopy
ceramics
conduction
atmospheres
electrical resistivity
scanning electron microscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system. / Zakharov, A. N.; Oskomov, K. V.; Rabotkin, S. V.; Solov'ev, A. A.; Sochugov, N. S.

In: Technical Physics, Vol. 55, No. 5, 01.05.2010, p. 719-723.

Research output: Contribution to journalArticle

Zakharov, A. N. ; Oskomov, K. V. ; Rabotkin, S. V. ; Solov'ev, A. A. ; Sochugov, N. S. / Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system. In: Technical Physics. 2010 ; Vol. 55, No. 5. pp. 719-723.
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