Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system

Abstract

Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.

Original language	English
Pages (from-to)	719-723
Number of pages	5
Journal	Technical Physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.1134/S1063784210050191
Publication status	Published - 1 May 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1134/S1063784210050191

Fingerprint Dive into the research topics of 'Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system'. Together they form a unique fingerprint.

Cite this

@article{445eaef84e094e219ab701075620eafb,

title = "Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system",

abstract = "Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.",

author = "Zakharov, {A. N.} and Oskomov, {K. V.} and Rabotkin, {S. V.} and Solov'ev, {A. A.} and Sochugov, {N. S.}",

year = "2010",

month = may,

day = "1",

doi = "10.1134/S1063784210050191",

language = "English",

volume = "55",

pages = "719--723",

journal = "Technical Physics",

issn = "1063-7842",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "5",

}

TY - JOUR

T1 - Gallium-doped zinc oxide films deposited using an unbalanced magnetron sputtering system

AU - Zakharov, A. N.

AU - Oskomov, K. V.

AU - Rabotkin, S. V.

AU - Solov'ev, A. A.

AU - Sochugov, N. S.

PY - 2010/5/1

Y1 - 2010/5/1

N2 - Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.

AB - Gallium-doped zinc oxide films are deposited using an unbalanced magnetron sputtering system. The films are deposited by dc sputtering of a conducting ceramic target in an argon atmosphere. The substrate temperature is 150°C. The film surface morphology is studied by scanning electron microscopy and atomic force microscopy. As the degree of magnetron unbalance increases, the electrophysical properties of the films deposited along the system axis are shown to improve, and the distribution of the film electrical resistivity over the substrate surface becomes more uniform.

UR - http://www.scopus.com/inward/record.url?scp=79956104613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956104613&partnerID=8YFLogxK

U2 - 10.1134/S1063784210050191

DO - 10.1134/S1063784210050191

M3 - Article

AN - SCOPUS:79956104613

VL - 55

SP - 719

EP - 723

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 5

ER -