Abstract
Using the transmission electron microscopy the defect structures forming in near surface layers of polycrystal copper under the high power pulsed microwave influence have been investigated. Forming the stable dislocation structure in near surface layer of irradiated specimens was confirmed. Decrease of the surface layer specific resistance was established. Possible physical causes of the dislocations generation under pulsed microwave influence have been discussed.
Original language | English |
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Pages (from-to) | 21-26 |
Number of pages | 6 |
Journal | Fizika i Khimiya Obrabotki Materialov |
Issue number | 5 |
Publication status | Published - Sep 1997 |
ASJC Scopus subject areas
- Materials Science(all)