Abstract
In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
Original language | English |
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Title of host publication | Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
Pages | 491-493 |
Number of pages | 3 |
Volume | 1 |
DOIs | |
Publication status | Published - 2005 |
Event | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 - Novosibirsk, Russian Federation Duration: 26 Jun 2005 → 2 Jul 2005 |
Other
Other | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
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Country | Russian Federation |
City | Novosibirsk |
Period | 26.6.05 → 2.7.05 |
ASJC Scopus subject areas
- Engineering(all)