Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam

Li Jian Feng, V. A. Makeev, G. E. Remnev, V. I. Guselnikov, M. C. Saltemakov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.

Original languageEnglish
Title of host publicationProceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
Pages491-493
Number of pages3
Volume1
DOIs
Publication statusPublished - 2005
Event9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 - Novosibirsk, Russian Federation
Duration: 26 Jun 20052 Jul 2005

Other

Other9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
CountryRussian Federation
CityNovosibirsk
Period26.6.052.7.05

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Feng, L. J., Makeev, V. A., Remnev, G. E., Guselnikov, V. I., & Saltemakov, M. C. (2005). Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam. In Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 (Vol. 1, pp. 491-493). [1507765] https://doi.org/10.1109/KORUS.2005.1507765