Abstract
In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
| Pages | 491-493 |
| Number of pages | 3 |
| Volume | 1 |
| DOIs | |
| Publication status | Published - 2005 |
| Event | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 - Novosibirsk, Russian Federation Duration: 26 Jun 2005 → 2 Jul 2005 |
Other
| Other | 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 |
|---|---|
| Country | Russian Federation |
| City | Novosibirsk |
| Period | 26.6.05 → 2.7.05 |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam. / Feng, Li Jian; Makeev, V. A.; Remnev, G. E.; Guselnikov, V. I.; Saltemakov, M. C.
Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005. Vol. 1 2005. p. 491-493 1507765.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam
AU - Feng, Li Jian
AU - Makeev, V. A.
AU - Remnev, G. E.
AU - Guselnikov, V. I.
AU - Saltemakov, M. C.
PY - 2005
Y1 - 2005
N2 - In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
AB - In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.
UR - http://www.scopus.com/inward/record.url?scp=33746150877&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33746150877&partnerID=8YFLogxK
U2 - 10.1109/KORUS.2005.1507765
DO - 10.1109/KORUS.2005.1507765
M3 - Conference contribution
SN - 0780389433
SN - 9780780389434
VL - 1
SP - 491
EP - 493
BT - Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
ER -