Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam

Abstract

In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.

Original language	English
Title of host publication	Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
Pages	491-493
Number of pages	3
Volume	1
DOIs	https://doi.org/10.1109/KORUS.2005.1507765
Publication status	Published - 2005
Event	9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 - Novosibirsk, Russian Federation Duration: 26 Jun 2005 → 2 Jul 2005

Other

Other	9th Russian-Korean International Symposium on Science and Technology, KORUS-2005
Country	Russian Federation
City	Novosibirsk
Period	26.6.05 → 2.7.05

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/KORUS.2005.1507765

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Feng, L. J., Makeev, V. A., Remnev, G. E., Guselnikov, V. I., & Saltemakov, M. C. (2005). Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam. In Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005 (Vol. 1, pp. 491-493). [1507765] https://doi.org/10.1109/KORUS.2005.1507765

Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam. / Feng, Li Jian; Makeev, V. A.; Remnev, G. E.; Guselnikov, V. I.; Saltemakov, M. C.

Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005. Vol. 1 2005. p. 491-493 1507765.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Feng, LJ, Makeev, VA, Remnev, GE, Guselnikov, VI & Saltemakov, MC 2005, Forming of GaAs thin films by ablation plasma produced high impulse phase ion beam. in Proceedings - 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005. vol. 1, 1507765, pp. 491-493, 9th Russian-Korean International Symposium on Science and Technology, KORUS-2005, Novosibirsk, Russian Federation, 26.6.05. https://doi.org/10.1109/KORUS.2005.1507765

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abstract = "In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.",

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AB - In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam(HIPIB) on GaAs target. Thin films deposited on plate Si(100). Thickness of film for one impulse averages 3-5nm, whole thickness investigation of forming film averaged 200-500nm. Composition and structure of film were investigated by methods X-ray diffraction(XRD), Rutherford back scattering(RBS). Atomic force raicroscopy(AFM) and Scanning electron microscope investigation (SEM) defined surface morphology of thin film GaAs.

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