Abstract
Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.
Original language | English |
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Pages (from-to) | 600-602 |
Number of pages | 3 |
Journal | Technical Physics |
Volume | 54 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2009 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)