Abstract
Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 600-602 |
| Number of pages | 3 |
| Journal | Technical Physics |
| Volume | 54 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2009 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation. / Remnev, G. E.; Ivanov, Yu F.; Naiden, E. P.; Saltymakov, M. S.; Stepanov, Andrey Vladimirovich; Shtan'Ko, V. F.
In: Technical Physics, Vol. 54, No. 4, 04.2009, p. 600-602.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of silicon carbide and diamond nanoparticles in the surface layer of a silicon target during short-pulse carbon ion implantation
AU - Remnev, G. E.
AU - Ivanov, Yu F.
AU - Naiden, E. P.
AU - Saltymakov, M. S.
AU - Stepanov, Andrey Vladimirovich
AU - Shtan'Ko, V. F.
PY - 2009/4
Y1 - 2009/4
N2 - Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.
AB - Synthesis of silicon carbide and diamond nanoparticles is studied during short-pulse implantation of carbon ions and protons into a silicon target. The experiments are carried out using a TEMP source of pulsed powerful ion beams based on a magnetically insulated diode with radial magnetic field B r . The beam parameters are as follows: the ion energy is 300 keV, the pulse duration is 80 ns, the beam consists of carbon ions and protons, and the ion current density is 30 A/cm2. Single-crystal silicon wafers serve as a target. SiC nanoparticles and nanodiamonds form in the surface layer of silicon subjected to more than 100 pulses. The average coherent domain sizes in the SiC particles and nanodiamonds are 12-16 and 8-9 nm, respectively.
UR - http://www.scopus.com/inward/record.url?scp=65449167678&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=65449167678&partnerID=8YFLogxK
U2 - 10.1134/S1063784209040264
DO - 10.1134/S1063784209040264
M3 - Article
AN - SCOPUS:65449167678
VL - 54
SP - 600
EP - 602
JO - Technical Physics
JF - Technical Physics
SN - 1063-7842
IS - 4
ER -