Formation of repetitively pulsed high-intensity, low-energy silicon ion beams

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Abstract

This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6–1.8 kV).

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Ion beams
ion beams
Silicon
silicon
Plasmas
arc discharges
energy
Cathodes
pulses
cathodes
Vacuum
Plasma flow
vacuum
Electrodes
electrodes
evaporators
Focused ion beams
Ions
Evaporators
magnetohydrodynamic flow

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

@article{560412c2a37f450e888f475a3b7aa393,
title = "Formation of repetitively pulsed high-intensity, low-energy silicon ion beams",
abstract = "This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6–1.8 kV).",
author = "Ryabchikov, {Alexander I.} and Sivin, {Denis O.} and Dektyarev, {Sergey V.} and Shevelev, {Alexey E.}",
year = "2020",
month = "2",
day = "11",
doi = "10.1016/j.nima.2019.163092",
language = "English",
volume = "953",
journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier",

}

TY - JOUR

T1 - Formation of repetitively pulsed high-intensity, low-energy silicon ion beams

AU - Ryabchikov, Alexander I.

AU - Sivin, Denis O.

AU - Dektyarev, Sergey V.

AU - Shevelev, Alexey E.

PY - 2020/2/11

Y1 - 2020/2/11

N2 - This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6–1.8 kV).

AB - This paper investigates the formation of pulsed and repetitively pulsed high-intensity, low-energy silicon ion beams. The formation of a pulsed silicon plasma was carried out by a vacuum arc discharge. Polycrystalline neutron-doped silicon was used as the evaporator's cathode. A pulsed vacuum arc discharge formed a directed silicon plasma flow with a duration of approximately 350μs. On the path of plasma transportation at a distance of 35 cm from the cathode surface, a system for forming a ballistically focused ion beam was installed. When a pulsed or a repetitively pulsed negative-bias potential is applied to the extracting grid electrode in the shape of a second-order surface, it ensured the formation of a sheath, the extraction of silicon ions from the plasma, and their acceleration in the layer. The shape of the extracting electrode provided the possibility of ballistic focusing of the silicon ion beam. Repetitively pulsed generation of the bias potential provided the possibility of preliminary plasma injection into the beam drift space between the bias-potential pulses. The paper has studied the features and regularities of the pulsed (with a duration of bias pulses up to 34μs) and repetitively pulsed (at frequencies of bias pulses of 20 and 100 kHz) silicon ion beams formation with a current of up to 2 A at a maximum ion current density of 0.8 A/cm2 at bias potentials of small amplitudes (0.6–1.8 kV).

UR - http://www.scopus.com/inward/record.url?scp=85075892593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85075892593&partnerID=8YFLogxK

U2 - 10.1016/j.nima.2019.163092

DO - 10.1016/j.nima.2019.163092

M3 - Article

AN - SCOPUS:85075892593

VL - 953

JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

SN - 0168-9002

M1 - 163092

ER -