Abstract
The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).
| Original language | English |
|---|---|
| Pages (from-to) | 35-38 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 122 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1997 |
Fingerprint
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Formation of heavily doped semiconductor layers by pulsed ion beam treatment. / Bayazitov, R. M.; Zakirzyanova, L. Kh; Khaibullin, I. B.; Remnev, G. E.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 122, No. 1, 01.01.1997, p. 35-38.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of heavily doped semiconductor layers by pulsed ion beam treatment
AU - Bayazitov, R. M.
AU - Zakirzyanova, L. Kh
AU - Khaibullin, I. B.
AU - Remnev, G. E.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).
AB - The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).
UR - http://www.scopus.com/inward/record.url?scp=0030733994&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030733994&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(96)00637-4
DO - 10.1016/S0168-583X(96)00637-4
M3 - Article
AN - SCOPUS:0030733994
VL - 122
SP - 35
EP - 38
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1
ER -