Formation of heavily doped semiconductor layers by pulsed ion beam treatment

R. M. Bayazitov, L. Kh Zakirzyanova, I. B. Khaibullin, G. E. Remnev

Research School of High-Energy Physics

Research output: Contribution to journal › Article

Abstract

The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 10¹⁹ cm^-3) layers are formed in the subsurface region (0.1-0,5 μm).

Original language	English
Pages (from-to)	35-38
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	122
Issue number	1
DOIs	https://doi.org/10.1016/S0168-583X(96)00637-4
Publication status	Published - 1 Jan 1997

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ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Cite this

Bayazitov, R. M., Zakirzyanova, L. K., Khaibullin, I. B., & Remnev, G. E. (1997). Formation of heavily doped semiconductor layers by pulsed ion beam treatment. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 122(1), 35-38. https://doi.org/10.1016/S0168-583X(96)00637-4

@article{a7493614d6554712ba2397f8c75dfed4,

title = "Formation of heavily doped semiconductor layers by pulsed ion beam treatment",

abstract = "The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).",

author = "Bayazitov, {R. M.} and Zakirzyanova, {L. Kh} and Khaibullin, {I. B.} and Remnev, {G. E.}",

year = "1997",

month = "1",

day = "1",

doi = "10.1016/S0168-583X(96)00637-4",

language = "English",

volume = "122",

pages = "35--38",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Formation of heavily doped semiconductor layers by pulsed ion beam treatment

AU - Bayazitov, R. M.

AU - Zakirzyanova, L. Kh

AU - Khaibullin, I. B.

AU - Remnev, G. E.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).

AB - The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).

UR - http://www.scopus.com/inward/record.url?scp=0030733994&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030733994&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(96)00637-4

DO - 10.1016/S0168-583X(96)00637-4

M3 - Article

AN - SCOPUS:0030733994

VL - 122

SP - 35

EP - 38

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1

ER -

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10.1016/S0168-583X(96)00637-4