Formation of heavily doped semiconductor layers by pulsed ion beam treatment

R. M. Bayazitov, L. Kh Zakirzyanova, I. B. Khaibullin, G. E. Remnev

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The formation of heavily doped Si and GaAs layers using implantation and powerful pulsed ion beams has been investigated. The influence of the depth distribution of energy released by the ions on the temperature profile and the electrically active impurity distribution in Si and GaAs is analyzed. It is shown that as a consequence of the simultaneous action of impurity diffusion processes normal to the surface and decomposition of GaAs at the surface, the heavily doped (8 × 1019 cm-3) layers are formed in the subsurface region (0.1-0,5 μm).

Original languageEnglish
Pages (from-to)35-38
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume122
Issue number1
DOIs
Publication statusPublished - 1 Jan 1997

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Ion beams
ion beams
Impurities
Semiconductor materials
impurities
temperature profiles
implantation
Decomposition
decomposition
Ions
ions
Temperature
energy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Formation of heavily doped semiconductor layers by pulsed ion beam treatment. / Bayazitov, R. M.; Zakirzyanova, L. Kh; Khaibullin, I. B.; Remnev, G. E.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 122, No. 1, 01.01.1997, p. 35-38.

Research output: Contribution to journalArticle

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