Formation of elementary radiation defects in halide crystals with different types of crystal lattice

Abstract

Pulsed spectrometry with time resolution has been used to study processes for creation of self-localized excitons and F centers under the action of a pulsed electron flux of nanosecond duration at temperatures in the region from 80 to 600 K in CaF₂ and LiF crystals. It is shown that an alternative to creation of self-localized excitons in the triplet state with increased crystal temperature during irradiation is formation of an F-H pair. A comparative analysis of the effectiveness of the processes for creation of elementary defects in the crystals studied is given.

Original language	English
Pages (from-to)	9-14
Number of pages	6
Journal	Russian Physics Journal
Volume	38
Issue number	1
DOIs	https://doi.org/10.1007/BF00559506
Publication status	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1007/BF00559506

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Lisitsyna, L. A., Lisitsyn, V. M., & Chinkov, E. P. (1995). Formation of elementary radiation defects in halide crystals with different types of crystal lattice. Russian Physics Journal, 38(1), 9-14. https://doi.org/10.1007/BF00559506

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abstract = "Pulsed spectrometry with time resolution has been used to study processes for creation of self-localized excitons and F centers under the action of a pulsed electron flux of nanosecond duration at temperatures in the region from 80 to 600 K in CaF2 and LiF crystals. It is shown that an alternative to creation of self-localized excitons in the triplet state with increased crystal temperature during irradiation is formation of an F-H pair. A comparative analysis of the effectiveness of the processes for creation of elementary defects in the crystals studied is given.",

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AU - Chinkov, E. P.

PY - 1995

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AB - Pulsed spectrometry with time resolution has been used to study processes for creation of self-localized excitons and F centers under the action of a pulsed electron flux of nanosecond duration at temperatures in the region from 80 to 600 K in CaF2 and LiF crystals. It is shown that an alternative to creation of self-localized excitons in the triplet state with increased crystal temperature during irradiation is formation of an F-H pair. A comparative analysis of the effectiveness of the processes for creation of elementary defects in the crystals studied is given.

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