Abstract
The paper deals with the effects of the bombarding-electron energy on the velocity of E4 center (E c - 0.76 eV) formation and the temperature dependences of the efficiency of the latter in a neutral volume and the space-charge region of n-type gallium arsenide. The specimens were Schottky diodes manufactured by depositing titanium onto epitaxial layers of n-GaAs with n = (2-4)·10 15 cm 3. The defect concentration was obtained by the DLTS spectroscopy method. It is shown that the number of E4 centers in the total amount of irradiation-induced defects sharply increases with increasing the bombarding-electron energy from 1.3 to 2.2 MeV. It is found out that the velocity of introducing E4 centers into the space-charge region does not depend on irradiation temperature and is by far higher than that in a neutral volume. In the latter, however, this velocity is non-linearly increasing with the irradiation temperature. It is assumed that an E4 center is a complex consisting of two unit defects generated in the adjacent sites of the Ga and As sublattices through a single collision. It is noted that its final configuration is formed as a result of interaction of these defects, which depends on the dynamics of transformation of their primary charge states.
| Original language | English |
|---|---|
| Pages (from-to) | 91-93 |
| Number of pages | 3 |
| Journal | Russian Physics Journal |
| Volume | 45 |
| Issue number | 2 |
| Publication status | Published - 2002 |
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Formation of E4-centers (E c - 0.76 eV) in gallium arsenide. / Peshev, V. V.; Surzhikov, A. P.
In: Russian Physics Journal, Vol. 45, No. 2, 2002, p. 91-93.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Formation of E4-centers (E c - 0.76 eV) in gallium arsenide
AU - Peshev, V. V.
AU - Surzhikov, A. P.
PY - 2002
Y1 - 2002
N2 - The paper deals with the effects of the bombarding-electron energy on the velocity of E4 center (E c - 0.76 eV) formation and the temperature dependences of the efficiency of the latter in a neutral volume and the space-charge region of n-type gallium arsenide. The specimens were Schottky diodes manufactured by depositing titanium onto epitaxial layers of n-GaAs with n = (2-4)·10 15 cm 3. The defect concentration was obtained by the DLTS spectroscopy method. It is shown that the number of E4 centers in the total amount of irradiation-induced defects sharply increases with increasing the bombarding-electron energy from 1.3 to 2.2 MeV. It is found out that the velocity of introducing E4 centers into the space-charge region does not depend on irradiation temperature and is by far higher than that in a neutral volume. In the latter, however, this velocity is non-linearly increasing with the irradiation temperature. It is assumed that an E4 center is a complex consisting of two unit defects generated in the adjacent sites of the Ga and As sublattices through a single collision. It is noted that its final configuration is formed as a result of interaction of these defects, which depends on the dynamics of transformation of their primary charge states.
AB - The paper deals with the effects of the bombarding-electron energy on the velocity of E4 center (E c - 0.76 eV) formation and the temperature dependences of the efficiency of the latter in a neutral volume and the space-charge region of n-type gallium arsenide. The specimens were Schottky diodes manufactured by depositing titanium onto epitaxial layers of n-GaAs with n = (2-4)·10 15 cm 3. The defect concentration was obtained by the DLTS spectroscopy method. It is shown that the number of E4 centers in the total amount of irradiation-induced defects sharply increases with increasing the bombarding-electron energy from 1.3 to 2.2 MeV. It is found out that the velocity of introducing E4 centers into the space-charge region does not depend on irradiation temperature and is by far higher than that in a neutral volume. In the latter, however, this velocity is non-linearly increasing with the irradiation temperature. It is assumed that an E4 center is a complex consisting of two unit defects generated in the adjacent sites of the Ga and As sublattices through a single collision. It is noted that its final configuration is formed as a result of interaction of these defects, which depends on the dynamics of transformation of their primary charge states.
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M3 - Article
VL - 45
SP - 91
EP - 93
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 2
ER -