Formation of conductive layers on dielectric substrates by ion bombardment

V. F. Pichugin, T. S. Frangulian, Yu Yu Kryuchkov, A. N. Feodorov, A. I. Riabchikov

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effect of the insulator-conductor transition in magnesium oxide crystals implanted with Fe+ ions at doses ranging from 1016 to 1017 ions/cm2 (ion energy 70 keV) was investigated. It was found that the conductive state of MgO does not change on heating of the irradiated crystals up to 1300 K in vacuum. In contrast, heat treatment in air results in a decreasing value of the conductivity. The nature of point defects and their role in annealing processes are discussed on the basis of the optical absorption data. Supplementary data were obtained using the techniques of Rutherford backscattering and channeling of α-particles. It was shown that changes of stoichiometric composition of the ion-implanted layers play an important role in the insulator-conductor transition.

Original languageEnglish
Pages (from-to)1203-1206
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 2
DOIs
Publication statusPublished - 1993

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Formation of conductive layers on dielectric substrates by ion bombardment'. Together they form a unique fingerprint.

  • Cite this