Formation of conductive layers on dielectric substrates by ion bombardment

Abstract

The effect of the insulator-conductor transition in magnesium oxide crystals implanted with Fe⁺ ions at doses ranging from 10¹⁶ to 10¹⁷ ions/cm² (ion energy 70 keV) was investigated. It was found that the conductive state of MgO does not change on heating of the irradiated crystals up to 1300 K in vacuum. In contrast, heat treatment in air results in a decreasing value of the conductivity. The nature of point defects and their role in annealing processes are discussed on the basis of the optical absorption data. Supplementary data were obtained using the techniques of Rutherford backscattering and channeling of α-particles. It was shown that changes of stoichiometric composition of the ion-implanted layers play an important role in the insulator-conductor transition.

Original language	English
Pages (from-to)	1203-1206
Number of pages	4
Journal	Nuclear Inst. and Methods in Physics Research, B
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90766-Y
Publication status	Published - 1993

ASJC Scopus subject areas

Surfaces, Coatings and Films
Instrumentation
Surfaces and Interfaces

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10.1016/0168-583X(93)90766-Y

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Pichugin, V. F., Frangulian, T. S., Kryuchkov, Y. Y., Feodorov, A. N., & Riabchikov, A. I. (1993). Formation of conductive layers on dielectric substrates by ion bombardment. Nuclear Inst. and Methods in Physics Research, B, 80-81(PART 2), 1203-1206. https://doi.org/10.1016/0168-583X(93)90766-Y

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title = "Formation of conductive layers on dielectric substrates by ion bombardment",

abstract = "The effect of the insulator-conductor transition in magnesium oxide crystals implanted with Fe+ ions at doses ranging from 1016 to 1017 ions/cm2 (ion energy 70 keV) was investigated. It was found that the conductive state of MgO does not change on heating of the irradiated crystals up to 1300 K in vacuum. In contrast, heat treatment in air results in a decreasing value of the conductivity. The nature of point defects and their role in annealing processes are discussed on the basis of the optical absorption data. Supplementary data were obtained using the techniques of Rutherford backscattering and channeling of α-particles. It was shown that changes of stoichiometric composition of the ion-implanted layers play an important role in the insulator-conductor transition.",

author = "Pichugin, {V. F.} and Frangulian, {T. S.} and Kryuchkov, {Yu Yu} and Feodorov, {A. N.} and Riabchikov, {A. I.}",

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T1 - Formation of conductive layers on dielectric substrates by ion bombardment

AU - Pichugin, V. F.

AU - Frangulian, T. S.

AU - Kryuchkov, Yu Yu

AU - Feodorov, A. N.

AU - Riabchikov, A. I.

PY - 1993

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N2 - The effect of the insulator-conductor transition in magnesium oxide crystals implanted with Fe+ ions at doses ranging from 1016 to 1017 ions/cm2 (ion energy 70 keV) was investigated. It was found that the conductive state of MgO does not change on heating of the irradiated crystals up to 1300 K in vacuum. In contrast, heat treatment in air results in a decreasing value of the conductivity. The nature of point defects and their role in annealing processes are discussed on the basis of the optical absorption data. Supplementary data were obtained using the techniques of Rutherford backscattering and channeling of α-particles. It was shown that changes of stoichiometric composition of the ion-implanted layers play an important role in the insulator-conductor transition.

AB - The effect of the insulator-conductor transition in magnesium oxide crystals implanted with Fe+ ions at doses ranging from 1016 to 1017 ions/cm2 (ion energy 70 keV) was investigated. It was found that the conductive state of MgO does not change on heating of the irradiated crystals up to 1300 K in vacuum. In contrast, heat treatment in air results in a decreasing value of the conductivity. The nature of point defects and their role in annealing processes are discussed on the basis of the optical absorption data. Supplementary data were obtained using the techniques of Rutherford backscattering and channeling of α-particles. It was shown that changes of stoichiometric composition of the ion-implanted layers play an important role in the insulator-conductor transition.

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