Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation

T. V. Vakhnii, G. A. Vershinin, I. A. Bozhko, I. A. Kurzina, Yu P. Sharkeev, T. S. Grekova

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalJournal of Surface Investigation
Volume2
Issue number2
DOIs
Publication statusPublished - 1 Apr 2008

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Ion implantation
Ion beams
Ions
Surface diffusion
Mass transfer
Impurities
Mathematical models
Defects

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation. / Vakhnii, T. V.; Vershinin, G. A.; Bozhko, I. A.; Kurzina, I. A.; Sharkeev, Yu P.; Grekova, T. S.

In: Journal of Surface Investigation, Vol. 2, No. 2, 01.04.2008, p. 301-304.

Research output: Contribution to journalArticle

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AU - Sharkeev, Yu P.

AU - Grekova, T. S.

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