Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation

T. V. Vakhnii, G. A. Vershinin, I. A. Bozhko, I. A. Kurzina, Yu P. Sharkeev, T. S. Grekova

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2 Citations (Scopus)


A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.

Original languageEnglish
Pages (from-to)301-304
Number of pages4
JournalJournal of Surface Investigation
Issue number2
Publication statusPublished - 1 Apr 2008


ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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