Abstract
A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.
| Original language | English |
|---|---|
| Pages (from-to) | 301-304 |
| Number of pages | 4 |
| Journal | Journal of Surface Investigation |
| Volume | 2 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Apr 2008 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation. / Vakhnii, T. V.; Vershinin, G. A.; Bozhko, I. A.; Kurzina, I. A.; Sharkeev, Yu P.; Grekova, T. S.
In: Journal of Surface Investigation, Vol. 2, No. 2, 01.04.2008, p. 301-304.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Formation of concentration profiles of implanted ions in metallic materials under polyenergetic implantation
AU - Vakhnii, T. V.
AU - Vershinin, G. A.
AU - Bozhko, I. A.
AU - Kurzina, I. A.
AU - Sharkeev, Yu P.
AU - Grekova, T. S.
PY - 2008/4/1
Y1 - 2008/4/1
N2 - A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.
AB - A physical and mathematical model of mass transfer in polycrystalline metallic materials under exposure to ion beams is proposed. Alongside bulk indiffusion from the irradiated surface, diffusion along the migrating extensive defects interacting with an impurity is considered. For a polyenergetic ion beam, the contribution of bulk indiffusion is presented as an integral over energy of the product of two functions; one of them describes the energy distribution of ions in a beam and the second represents the implantation profile of monoenergetic ion beam.
UR - http://www.scopus.com/inward/record.url?scp=58449116648&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=58449116648&partnerID=8YFLogxK
U2 - 10.1134/S1027451008020262
DO - 10.1134/S1027451008020262
M3 - Article
AN - SCOPUS:58449116648
VL - 2
SP - 301
EP - 304
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 2
ER -