Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams

Abstract

This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm ², ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 ¹⁸ cm ^-3 is created.

Original language	English
Title of host publication	2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
Pages	775-779
Number of pages	5
Publication status	Published - 2000
Event	2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan Duration: 25 Jun 2000 → 30 Jun 2000

Other

Other	2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
Country	Japan
City	Nagaoka
Period	25.6.00 → 30.6.00

ASJC Scopus subject areas

Nuclear and High Energy Physics

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Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. / Opekunov, M. S.; Grushin, I. I.; Remnev, G. E.; Kokhanenko, A. P.; Korotaev, A. G.; Voitsekhovskii, A. V.

2000 13th International Conference on High-Power Particle Beams, BEAMS 2000. 2000. p. 775-779 6219983.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Opekunov, MS, Grushin, II, Remnev, GE, Kokhanenko, AP, Korotaev, AG & Voitsekhovskii, AV 2000, Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. in 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000., 6219983, pp. 775-779, 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000, Nagaoka, Japan, 25.6.00.

@inproceedings{f56ed0ddb58b42ecb917b228bdb9a714,

title = "Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams",

abstract = "This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.",

author = "Opekunov, {M. S.} and Grushin, {I. I.} and Remnev, {G. E.} and Kokhanenko, {A. P.} and Korotaev, {A. G.} and Voitsekhovskii, {A. V.}",

year = "2000",

language = "English",

pages = "775--779",

booktitle = "2000 13th International Conference on High-Power Particle Beams, BEAMS 2000",

note = "2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 ; Conference date: 25-06-2000 Through 30-06-2000",

}

TY - GEN

T1 - Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams

AU - Opekunov, M. S.

AU - Grushin, I. I.

AU - Remnev, G. E.

AU - Kokhanenko, A. P.

AU - Korotaev, A. G.

AU - Voitsekhovskii, A. V.

PY - 2000

Y1 - 2000

N2 - This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.

AB - This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.

UR - http://www.scopus.com/inward/record.url?scp=84864542589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864542589&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84864542589

SP - 775

EP - 779

BT - 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000

T2 - 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000

Y2 - 25 June 2000 through 30 June 2000

ER -