Abstract
This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.
| Original language | English |
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| Title of host publication | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 |
| Pages | 775-779 |
| Number of pages | 5 |
| Publication status | Published - 2000 |
| Event | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan Duration: 25 Jun 2000 → 30 Jun 2000 |
Other
| Other | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 |
|---|---|
| Country | Japan |
| City | Nagaoka |
| Period | 25.6.00 → 30.6.00 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
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Cite this
Opekunov, M. S., Grushin, I. I., Remnev, G. E., Kokhanenko, A. P., Korotaev, A. G., & Voitsekhovskii, A. V. (2000). Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. In 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 (pp. 775-779). [6219983]