Abstract
This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.
| Original language | English |
|---|---|
| Title of host publication | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 |
| Pages | 775-779 |
| Number of pages | 5 |
| Publication status | Published - 2000 |
| Event | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan Duration: 25 Jun 2000 → 30 Jun 2000 |
Other
| Other | 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 |
|---|---|
| Country | Japan |
| City | Nagaoka |
| Period | 25.6.00 → 30.6.00 |
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ASJC Scopus subject areas
- Nuclear and High Energy Physics
Cite this
Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. / Opekunov, M. S.; Grushin, I. I.; Remnev, G. E.; Kokhanenko, A. P.; Korotaev, A. G.; Voitsekhovskii, A. V.
2000 13th International Conference on High-Power Particle Beams, BEAMS 2000. 2000. p. 775-779 6219983.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams
AU - Opekunov, M. S.
AU - Grushin, I. I.
AU - Remnev, G. E.
AU - Kokhanenko, A. P.
AU - Korotaev, A. G.
AU - Voitsekhovskii, A. V.
PY - 2000
Y1 - 2000
N2 - This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.
AB - This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.
UR - http://www.scopus.com/inward/record.url?scp=84864542589&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864542589&partnerID=8YFLogxK
M3 - Conference contribution
SP - 775
EP - 779
BT - 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
ER -