Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams

M. S. Opekunov, I. I. Grushin, G. E. Remnev, A. P. Kokhanenko, A. G. Korotaev, A. V. Voitsekhovskii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.

Original languageEnglish
Title of host publication2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
Pages775-779
Number of pages5
Publication statusPublished - 2000
Event2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan
Duration: 25 Jun 200030 Jun 2000

Other

Other2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
CountryJapan
CityNagaoka
Period25.6.0030.6.00

Fingerprint

implantation
boron
ion beams
silicon
beam currents
secondary ion mass spectrometry
charge carriers
surface layers
ions
current density
metals
atoms
energy

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

Opekunov, M. S., Grushin, I. I., Remnev, G. E., Kokhanenko, A. P., Korotaev, A. G., & Voitsekhovskii, A. V. (2000). Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. In 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 (pp. 775-779). [6219983]

Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. / Opekunov, M. S.; Grushin, I. I.; Remnev, G. E.; Kokhanenko, A. P.; Korotaev, A. G.; Voitsekhovskii, A. V.

2000 13th International Conference on High-Power Particle Beams, BEAMS 2000. 2000. p. 775-779 6219983.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Opekunov, MS, Grushin, II, Remnev, GE, Kokhanenko, AP, Korotaev, AG & Voitsekhovskii, AV 2000, Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. in 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000., 6219983, pp. 775-779, 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000, Nagaoka, Japan, 25.6.00.
Opekunov MS, Grushin II, Remnev GE, Kokhanenko AP, Korotaev AG, Voitsekhovskii AV. Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. In 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000. 2000. p. 775-779. 6219983
Opekunov, M. S. ; Grushin, I. I. ; Remnev, G. E. ; Kokhanenko, A. P. ; Korotaev, A. G. ; Voitsekhovskii, A. V. / Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000. 2000. pp. 775-779
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AU - Voitsekhovskii, A. V.

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