Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams

M. S. Opekunov, I. I. Grushin, G. E. Remnev, A. P. Kokhanenko, A. G. Korotaev, A. V. Voitsekhovskii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This work was dedicated to the research of possibility to form a nano-sized highly doped boron near-surface layers in silicon. Forming such layers will make it possible to vary the potential barrier height on metal-semiconductor interface. Implantation of boron atoms into the silicon substrate was conducted by the recoil implantation method irradiating the boron film deposited onto the silicon surface by Al-ion high power beams (current density 4-10 A/cm 2, ion energy 30-150 keV/Z). Analysis of thus made structures by SIMS and measurement of structure's electrical parameters certificates that the near-surface 10 nm thick conductive layer with the charge carrier concentration greater than 10 18 cm -3 is created.

Original languageEnglish
Title of host publication2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
Pages775-779
Number of pages5
Publication statusPublished - 2000
Event2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 - Nagaoka, Japan
Duration: 25 Jun 200030 Jun 2000

Other

Other2000 13th International Conference on High-Power Particle Beams, BEAMS 2000
CountryJapan
CityNagaoka
Period25.6.0030.6.00

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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    Opekunov, M. S., Grushin, I. I., Remnev, G. E., Kokhanenko, A. P., Korotaev, A. G., & Voitsekhovskii, A. V. (2000). Formation of boron heavily doped nanolayer in silicon by recoil implantation using high-intensive power ion beams. In 2000 13th International Conference on High-Power Particle Beams, BEAMS 2000 (pp. 775-779). [6219983]