Abstract
An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | Society of Photo-Optical Instrumentation Engineers |
Pages | 274-283 |
Number of pages | 10 |
Volume | 3881 |
Publication status | Published - 1999 |
Event | Proceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA Duration: 22 Sep 1999 → 23 Sep 1999 |
Other
Other | Proceedings of the 1999 Microelectronic Device Technology III |
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City | Santa Clara, CA, USA |
Period | 22.9.99 → 23.9.99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics