Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

Andrey Kokhanenko, Alexander Korotaev, Alexander Voitsekhovskii, Ivan Grushin, Mikkail Opekunov, Gennady Remnev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages274-283
Number of pages10
Volume3881
Publication statusPublished - 1999
EventProceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA
Duration: 22 Sep 199923 Sep 1999

Other

OtherProceedings of the 1999 Microelectronic Device Technology III
CitySanta Clara, CA, USA
Period22.9.9923.9.99

Fingerprint

Ion bombardment
ion irradiation
Boron
boron
Silicon
silicon
Secondary ion mass spectrometry
Ion implantation
Ion beams
secondary ion mass spectrometry
Carrier concentration
bombardment
implantation
Current density
ion beams
Semiconductor materials
current density
conduction
Atoms
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Kokhanenko, A., Korotaev, A., Voitsekhovskii, A., Grushin, I., Opekunov, M., & Remnev, G. (1999). Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3881, pp. 274-283). Society of Photo-Optical Instrumentation Engineers.

Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. / Kokhanenko, Andrey; Korotaev, Alexander; Voitsekhovskii, Alexander; Grushin, Ivan; Opekunov, Mikkail; Remnev, Gennady.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3881 Society of Photo-Optical Instrumentation Engineers, 1999. p. 274-283.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kokhanenko, A, Korotaev, A, Voitsekhovskii, A, Grushin, I, Opekunov, M & Remnev, G 1999, Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3881, Society of Photo-Optical Instrumentation Engineers, pp. 274-283, Proceedings of the 1999 Microelectronic Device Technology III, Santa Clara, CA, USA, 22.9.99.
Kokhanenko A, Korotaev A, Voitsekhovskii A, Grushin I, Opekunov M, Remnev G. Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3881. Society of Photo-Optical Instrumentation Engineers. 1999. p. 274-283
Kokhanenko, Andrey ; Korotaev, Alexander ; Voitsekhovskii, Alexander ; Grushin, Ivan ; Opekunov, Mikkail ; Remnev, Gennady. / Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3881 Society of Photo-Optical Instrumentation Engineers, 1999. pp. 274-283
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