Abstract
An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 274-283 |
| Number of pages | 10 |
| Volume | 3881 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA Duration: 22 Sep 1999 → 23 Sep 1999 |
Other
| Other | Proceedings of the 1999 Microelectronic Device Technology III |
|---|---|
| City | Santa Clara, CA, USA |
| Period | 22.9.99 → 23.9.99 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
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Kokhanenko, A., Korotaev, A., Voitsekhovskii, A., Grushin, I., Opekunov, M., & Remnev, G. (1999). Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3881, pp. 274-283). Society of Photo-Optical Instrumentation Engineers.