Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

Abstract

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm ² and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 ¹⁸ cm ^-3.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	274-283
Number of pages	10
Volume	3881
Publication status	Published - 1999
Event	Proceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA Duration: 22 Sep 1999 → 23 Sep 1999

Other

Other	Proceedings of the 1999 Microelectronic Device Technology III
City	Santa Clara, CA, USA
Period	22.9.99 → 23.9.99

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. / Kokhanenko, Andrey; Korotaev, Alexander; Voitsekhovskii, Alexander; Grushin, Ivan; Opekunov, Mikkail; Remnev, Gennady.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3881 Society of Photo-Optical Instrumentation Engineers, 1999. p. 274-283.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kokhanenko, A, Korotaev, A, Voitsekhovskii, A, Grushin, I, Opekunov, M & Remnev, G 1999, Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3881, Society of Photo-Optical Instrumentation Engineers, pp. 274-283, Proceedings of the 1999 Microelectronic Device Technology III, Santa Clara, CA, USA, 22.9.99.

@inproceedings{ddb63631129348fba8616b77547d25df,

title = "Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation",

abstract = "An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3. ",

author = "Andrey Kokhanenko and Alexander Korotaev and Alexander Voitsekhovskii and Ivan Grushin and Mikkail Opekunov and Gennady Remnev",

year = "1999",

language = "English",

volume = "3881",

pages = "274--283",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Proceedings of the 1999 Microelectronic Device Technology III ; Conference date: 22-09-1999 Through 23-09-1999",

}

TY - GEN

T1 - Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

AU - Kokhanenko, Andrey

AU - Korotaev, Alexander

AU - Voitsekhovskii, Alexander

AU - Grushin, Ivan

AU - Opekunov, Mikkail

AU - Remnev, Gennady

PY - 1999

Y1 - 1999

N2 - An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.

AB - An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.

UR - http://www.scopus.com/inward/record.url?scp=0033309805&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033309805&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0033309805

VL - 3881

SP - 274

EP - 283

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Society of Photo-Optical Instrumentation Engineers

T2 - Proceedings of the 1999 Microelectronic Device Technology III

Y2 - 22 September 1999 through 23 September 1999

ER -