Abstract
An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 274-283 |
| Number of pages | 10 |
| Volume | 3881 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA Duration: 22 Sep 1999 → 23 Sep 1999 |
Other
| Other | Proceedings of the 1999 Microelectronic Device Technology III |
|---|---|
| City | Santa Clara, CA, USA |
| Period | 22.9.99 → 23.9.99 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. / Kokhanenko, Andrey; Korotaev, Alexander; Voitsekhovskii, Alexander; Grushin, Ivan; Opekunov, Mikkail; Remnev, Gennady.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3881 Society of Photo-Optical Instrumentation Engineers, 1999. p. 274-283.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation
AU - Kokhanenko, Andrey
AU - Korotaev, Alexander
AU - Voitsekhovskii, Alexander
AU - Grushin, Ivan
AU - Opekunov, Mikkail
AU - Remnev, Gennady
PY - 1999
Y1 - 1999
N2 - An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.
AB - An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.
UR - http://www.scopus.com/inward/record.url?scp=0033309805&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033309805&partnerID=8YFLogxK
M3 - Conference contribution
VL - 3881
SP - 274
EP - 283
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
ER -