Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation

Andrey Kokhanenko, Alexander Korotaev, Alexander Voitsekhovskii, Ivan Grushin, Mikkail Opekunov, Gennady Remnev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of born atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm 2 and 30-150 KeV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 10 18 cm -3.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages274-283
Number of pages10
Volume3881
Publication statusPublished - 1999
EventProceedings of the 1999 Microelectronic Device Technology III - Santa Clara, CA, USA
Duration: 22 Sep 199923 Sep 1999

Other

OtherProceedings of the 1999 Microelectronic Device Technology III
CitySanta Clara, CA, USA
Period22.9.9923.9.99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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  • Cite this

    Kokhanenko, A., Korotaev, A., Voitsekhovskii, A., Grushin, I., Opekunov, M., & Remnev, G. (1999). Formation of boron heavily-doped nanolayer in silicon by powerful ion irradiation. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3881, pp. 274-283). Society of Photo-Optical Instrumentation Engineers.