The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.
|Number of pages||7|
|Journal||Physica Status Solidi (B) Basic Research|
|Publication status||Published - Nov 1979|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics