FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS.

D. E. Popov, V. V. Kaplin, S. A. Vorobiev

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.

Original languageEnglish
Pages (from-to)263-269
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume96
Issue number1
Publication statusPublished - Nov 1979

Fingerprint

Fluxes
Electrons
Crystalline materials
electrons
Irradiation
Crystals
irradiation
crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS. / Popov, D. E.; Kaplin, V. V.; Vorobiev, S. A.

In: Physica Status Solidi (B) Basic Research, Vol. 96, No. 1, 11.1979, p. 263-269.

Research output: Contribution to journalArticle

Popov, D. E. ; Kaplin, V. V. ; Vorobiev, S. A. / FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS. In: Physica Status Solidi (B) Basic Research. 1979 ; Vol. 96, No. 1. pp. 263-269.
@article{d06344a0427d4f65ba1d5d0b66f32e48,
title = "FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS.",
abstract = "The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.",
author = "Popov, {D. E.} and Kaplin, {V. V.} and Vorobiev, {S. A.}",
year = "1979",
month = "11",
language = "English",
volume = "96",
pages = "263--269",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS.

AU - Popov, D. E.

AU - Kaplin, V. V.

AU - Vorobiev, S. A.

PY - 1979/11

Y1 - 1979/11

N2 - The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.

AB - The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.

UR - http://www.scopus.com/inward/record.url?scp=0018543687&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018543687&partnerID=8YFLogxK

M3 - Article

VL - 96

SP - 263

EP - 269

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -