FLUX REDISTRIBUTION OF CHANNELED FAST ELECTRONS.

D. E. Popov, V. V. Kaplin, S. A. Vorobiev

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The orientation dependence of planar channeling for 0. 5 to 2. 5 MeV electron transmission through crystalline Si is experimentally observed. The phenomenon of spatial flux redistribution results from the formation of bound states of the channeled electrons with atomic planes. Application of electron channeling is considered for the control of irradiation effects in crystals and the study of perfection of the crystalline structure.

Original languageEnglish
Pages (from-to)263-269
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume96
Issue number1
Publication statusPublished - Nov 1979

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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