Flexible hard Al-Si-N films for high temperature operation

J. Musil, G. Remnev, V. Legostaev, V. Uglov, A. Lebedynskiy, A. Lauk, J. Procházka, S. Haviar, E. Smolyanskiy

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This article reports on flexible hard Al-Si-N films prepared by reactive magnetron sputtering. The structure and mechanical properties of Al-Si-N films were controlled by the content of Si in the film, partial pressure of nitrogen pN2 used in sputtering and the power delivered to the magnetron. The Al-Si-N films with a low (≤ 10 at.%) Si content and with a high (≥ 20 at.%) Si content were prepared. Correlations between the structure, microstructure, mechanical properties and their thermal stability of the Al-Si-N films are analyzed in detail. Thermal stability of Al-Si-N films was assessed by thermal annealing in air and water vapor up to annealing temperature Ta = 1200 °C. It is shown that (1) the increase of Si content in the Al-Si-N film leads to the change of its crystalline structure from polycrystalline to X-ray amorphous and (2) the flexible hard Al-Si-N films with high (i) hardness H ≈ 20 GPa, (ii) ratio H/E ≥ 0.1, and (iii) elastic recovery We ≥ 60% exhibit enhanced resistance to cracking and (3) the thermal stability of Al-Si-N films with a high (≥ 20 at.%) Si content achieves up to Ta ≈ 1200 °C in air and up to Ta ≈ 800 °C in water vapor; here the effective Young's modulus E = E / (1 − ν2), E is the Young's modulus and ν is the Poisson's ratio. Conditions under which the flexible hard Al-Si-N films with enhanced resistance to cracking and high thermal stability can be prepared are described in detail.

Original languageEnglish
Pages (from-to)1112-1118
Number of pages7
JournalSurface and Coatings Technology
Volume307
DOIs
Publication statusPublished - 15 Dec 2016

Fingerprint

High temperature operations
Thermodynamic stability
thermal stability
Steam
Water vapor
water vapor
modulus of elasticity
Elastic moduli
mechanical properties
Annealing
Mechanical properties
annealing
Reactive sputtering
air
Poisson ratio
Air
Partial pressure
Magnetron sputtering
Sputtering
partial pressure

Keywords

  • Al-Si-N film
  • High-temperature operation
  • Magnetron sputtering
  • Mechanical properties
  • Structure
  • Thermal stability

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Flexible hard Al-Si-N films for high temperature operation. / Musil, J.; Remnev, G.; Legostaev, V.; Uglov, V.; Lebedynskiy, A.; Lauk, A.; Procházka, J.; Haviar, S.; Smolyanskiy, E.

In: Surface and Coatings Technology, Vol. 307, 15.12.2016, p. 1112-1118.

Research output: Contribution to journalArticle

Musil, J. ; Remnev, G. ; Legostaev, V. ; Uglov, V. ; Lebedynskiy, A. ; Lauk, A. ; Procházka, J. ; Haviar, S. ; Smolyanskiy, E. / Flexible hard Al-Si-N films for high temperature operation. In: Surface and Coatings Technology. 2016 ; Vol. 307. pp. 1112-1118.
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AB - This article reports on flexible hard Al-Si-N films prepared by reactive magnetron sputtering. The structure and mechanical properties of Al-Si-N films were controlled by the content of Si in the film, partial pressure of nitrogen pN2 used in sputtering and the power delivered to the magnetron. The Al-Si-N films with a low (≤ 10 at.%) Si content and with a high (≥ 20 at.%) Si content were prepared. Correlations between the structure, microstructure, mechanical properties and their thermal stability of the Al-Si-N films are analyzed in detail. Thermal stability of Al-Si-N films was assessed by thermal annealing in air and water vapor up to annealing temperature Ta = 1200 °C. It is shown that (1) the increase of Si content in the Al-Si-N film leads to the change of its crystalline structure from polycrystalline to X-ray amorphous and (2) the flexible hard Al-Si-N films with high (i) hardness H ≈ 20 GPa, (ii) ratio H/E⁎ ≥ 0.1, and (iii) elastic recovery We ≥ 60% exhibit enhanced resistance to cracking and (3) the thermal stability of Al-Si-N films with a high (≥ 20 at.%) Si content achieves up to Ta ≈ 1200 °C in air and up to Ta ≈ 800 °C in water vapor; here the effective Young's modulus E⁎ = E / (1 − ν2), E is the Young's modulus and ν is the Poisson's ratio. Conditions under which the flexible hard Al-Si-N films with enhanced resistance to cracking and high thermal stability can be prepared are described in detail.

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