TY - JOUR

T1 - Fine features of parametric X-ray radiation by relativistic electrons and ions

AU - Korotchenko, K. B.

AU - Eikhorn, Yu L.

AU - Dabagov, S. B.

N1 - Funding Information:
The authors are grateful to Prof. Yu.L. Pivovarov and Yu.P. Kunashenko for discussion on the Z-dependence of RXR intensity for ions. The research is carried out at Tomsk Polytechnic University within the framework of Tomsk Polytechnic University Competitiveness Enhancement Program grant. One of the authors (SD) would like to acknowledge the support by the Competitiveness Program of National Research Nuclear University MEPhI .
Publisher Copyright:
© 2017 The Author(s)

PY - 2017/11/10

Y1 - 2017/11/10

N2 - In present work within the frame of dynamic theory for parametric X-ray radiation in two-beam approximation we have presented detailed studies on parametric radiation emitted by relativistic both electrons and ions at channeling in crystals that is highly requested at planned experiments. The analysis done has shown that the intensity of radiation at relativistic electron channeling in Si (110) with respect to the conventional parametric radiation intensity has up to 5% uncertainty, while the error of approximate formulas for calculating parametric X-ray radiation maxima does not exceed 1.2%. We have demonstrated that simple expressions for the Fourier components of Si crystal susceptibility χ0 and χgσ could be reduced, as well as the temperature dependence for radiation maxima in Si crystal (diffraction plane (110)) within Debye model. Moreover, for any types of channeled ions it is shown that the parametric X-ray radiation intensity is proportional to z2−b(Z,z)/z with the function b(Z,z) depending on the screening parameter and the ion charge number z=Z−Ze.

AB - In present work within the frame of dynamic theory for parametric X-ray radiation in two-beam approximation we have presented detailed studies on parametric radiation emitted by relativistic both electrons and ions at channeling in crystals that is highly requested at planned experiments. The analysis done has shown that the intensity of radiation at relativistic electron channeling in Si (110) with respect to the conventional parametric radiation intensity has up to 5% uncertainty, while the error of approximate formulas for calculating parametric X-ray radiation maxima does not exceed 1.2%. We have demonstrated that simple expressions for the Fourier components of Si crystal susceptibility χ0 and χgσ could be reduced, as well as the temperature dependence for radiation maxima in Si crystal (diffraction plane (110)) within Debye model. Moreover, for any types of channeled ions it is shown that the parametric X-ray radiation intensity is proportional to z2−b(Z,z)/z with the function b(Z,z) depending on the screening parameter and the ion charge number z=Z−Ze.

KW - Band structure of transverse energy levels

KW - Crystal channeling

KW - Parametric X-ray radiation

KW - T-dependence of PXR intensity

KW - Z-dependence of RXR intensity for ions

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U2 - 10.1016/j.physletb.2017.09.088

DO - 10.1016/j.physletb.2017.09.088

M3 - Article

AN - SCOPUS:85042184232

VL - 774

SP - 470

EP - 475

JO - Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics

JF - Physics Letters, Section B: Nuclear, Elementary Particle and High-Energy Physics

SN - 0370-2693

ER -